Results 171 to 180 of about 12,308 (221)

A High-Sensitivity, Low-Noise, and Low-Hysteresis Tunneling Magnetoresistance Sensor Based on Structural Optimization of Magnetic Tunnel Junctions. [PDF]

Sensors (Basel)
Bi R, Chen R, Wu S, Ma H, Zhang H, Liu X, He J, Hu J.   +7 more
europepmc   +1 more source

Guanine-based spin valve with spin rectification effect for an artificial memory element. [PDF]

Heliyon
Iacob N, Chirila C, Sangaré M, Kuncser A, Stanciu AE, Socol M, Negrila CC, Botea M, Locovei C, Schinteie G, Galca AC, Stanculescu A, Pintilie L, Kuncser V, Borca B.   +14 more
europepmc   +1 more source

Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices. [PDF]

Sci Rep
Hemmasi SP, Moaiyeri MH, Eslami N, Ebrahimi B.   +3 more
europepmc   +1 more source

Giant shot noise in superconductor/ferromagnet junctions with orbital-symmetry- controlled spin-orbit coupling. [PDF]

Nat Commun
González-Ruano C, Shen C, Tuero P, Tiusan C, Lu Y, Han JE, Žutić I, Aliev FG.   +7 more
europepmc   +1 more source

Large Spin Polarization from symmetry-breaking Antiferromagnets in Antiferromagnetic Tunnel Junctions. [PDF]

Nat Commun
Chou CT, Ghosh S, McGoldrick BC, Nguyen T, Gurung G, Tsymbal EY, Li M, Mkhoyan KA, Liu L.   +8 more
europepmc   +1 more source

Enhancing diagnostic reliability in non-invasive health Monitoring: An analytical framework for optimizing magnetic sensor-skin interactions in biomedical applications. [PDF]

Mater Today Bio
Khan WU, Alissa M, Ma H, Bhatti UA, Alghamdi A, Alshehri MA, Albelasi A.   +6 more
europepmc   +1 more source

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TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS

International Journal of Modern Physics B, 2004
Taking into account the basic physics of diluted ferromagnetic semiconductors (DMS), we use the tunneling Hamiltonian approach to studying the spin-polarized transport in GaMnAs / AlAs / GaMnAs DMS tunnel junctions. It is found that the splitting, Fermi energies, and the hole concentration for a fixed Mn impurity density vary with temperature, which ...
Tao, Y. C., Hu, J. G.
openaire   +1 more source

Tunnelling Magnetoresistance (TMR)

2021
In the chapter, we have introduced the concept of tunneling magnetoresistance, magnetic tunnel junction (MTJ), and magnetic junctions. A detailed physical explanation behind the phenomenon has also been presented. In this context, quantum mechanical tunneling of conduction electrons, which is at the origin of this phenomenon, has been discussed in the ...
Puja Dey, Jitendra Nath Roy
openaire   +1 more source

Spin-tunneling magnetoresistive sensors

Sensors and Actuators A: Physical, 2000
Abstract Magnetic sensors based on spin-dependent tunneling (SDT) have been theoretically simulated, fabricated, and experimentally tested. In particular, SDT sensors that possess even and odd input–output characteristics have been introduced, designed, and studied.
S.I Kasatkin, P.I Nikitin, A.M Muravjev, V.V Lopatin, F.F Popadinetz, A.V Svatkov, A.Yu Toporov, F.A Pudonin, A.I Nikitin   +8 more
openaire   +1 more source