Results 91 to 100 of about 14,475 (217)
Negative hopping magnetoresistance of two-dimensional electron gas in a smooth random potential
, 1995 We show that the tunnel coupling between semiclassical states localized in different minima of a smooth random potential increases when magnetic field is applied. This increase originates from the difference in gauge factors which electron wave functions
B. I. Shklovskii +13 more
core +1 more source
Advanced Science, EarlyView.Magnetoelectric nanoparticles (MENPs) enable fully wireless, minutely invasive neuromodulation, and potentially neural recording, by converting magnetic into electric and, conversely, electric into magnetic fields, respectively, at high spatiotemporal resolution.
Elric Zhang +14 more
wiley +1 more source
A Spin‐Texture Spin‐Valves With Van Der Waals Magnets
Advanced Science, EarlyView.ABSTRACT All‐electrical methods for nucleating, detecting, and manipulating spin textures in 2D van der Waals (vdW) magnets can serve as fundamental building blocks for multi‐state spintronic memory, logic, and neuromorphic computing applications.
Bing Zhao +3 more
wiley +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, EarlyView.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source
Spin-dependent Transport Properties of CrO2 Micro Rod
Nano-Micro Letters, 2014 The CrO2 micro rod powder was synthesized by decomposing the CrO3 flakes at a specific temperature to yield precursor and annealing such a precursor in a sealed glass tube.
Zhen Wang +6 more
doaj +1 more source
Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions
, 2008 We report a large, quasi-reversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (\gma) is exchange coupled to a hard ferromagnetic metal (MnAs).
D. Chiba +6 more
core +1 more source
Advanced Electronic Materials, EarlyView.A concealable physical unclonable function (PUF) based on an array of 384 nanoscale voltage‐controlled magnetic tunnel junctions is demonstrated. The PUF operates without any external magnetic field. It uses a combination of deterministic and stochastic switching mechanisms, based on the spin transfer torque and voltage‐controlled magnetic anisotropy ...
Thomas Neuner +6 more
wiley +1 more source
Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions
AIP Advances, 2016 Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier ...
Fen Liu +5 more
doaj +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Role of phase breaking processes on resonant spin transfer torque nano-oscillators
AIP Advances, 2018 Spin transfer torque nano-oscillators (STNOs) based on magnetoresistance and spin transfer torque effects find potential applications in miniaturized wireless communication devices.
Abhishek Sharma +2 more
doaj +1 more source