Results 121 to 130 of about 14,475 (217)

Emerging single‐element ferroelectrics: From theory to experiment

open access: yesInfoMat, Volume 8, Issue 4, April 2026.
This review explores recent developments in single‐element ferroelectrics, covering mechanisms of ferroelectric behavior, their crystal structures, key preparation methods, ferroelectric performance characteristics, and promising device applications in field‐effect transistors, photodetectors, and visual perceptrons.
Run Zhao   +7 more
wiley   +1 more source

Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl2O4 Quasi‐Quantum Well Structures

open access: yesAdvanced Science, 2019
The quantum well (QW) realizes new functionalities due to the discrete electronic energy levels formed in the well‐shaped potential. Magnetic tunnel junctions (MTJs) combined with a quasi‐QW structure of Cr/ultrathin‐Fe/MgAl2O4(001)/Fe, in which the Cr ...
Qingyi Xiang   +7 more
doaj   +1 more source

Interfacial Atomic and Electronic Structures of LSM/YSZ Thin Films as Models for SOC Air Electrodes

open access: yesChemElectroChem, Volume 13, Issue 6, 17 March 2026.
Lanthanum–strontium manganite/yttria‐stabilized zirconia thin films serve as model systems for solid oxide cell electrodes, where high‐resolution scanning transmission electron microscopy and X‐ray photoelectron spectroscopy reveal atomistic interfacial features and electronic structure supported by atomistic modeling of these interfaces.
Hebatallah Ali   +18 more
wiley   +1 more source

THE EVALUATION OF THE TUNNELING MAGNETORESISTANCE MANGANITE- PMMA COMPOSITES [PDF]

open access: yesФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2013
Lanthanum-strontium manganite containing composites were synthesized by a warm pressing technique. The LSMO precursor was prepared by modified sol-gel method.
A.V. Vasiliev   +3 more
doaj  

Tunneling magnetoresistance sensor with pT level 1/f magnetic noise

open access: yesAIP Advances, 2017
Magnetoresistive devices are important components in a large number of commercial electronic products in a wide range of applications including industrial position sensors, automotive sensors, hard disk read heads, cell phone compasses, and solid state ...
James G. Deak, Zhimin Zhou, Weifeng Shen
doaj   +1 more source

Room‐temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

open access: yesInfoMat
The exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The
Haiyang Pan   +11 more
doaj   +1 more source

Nanodimensional semiconductors and dielectrics: achievements of nanoelectronics and novel materials

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2019
It is a short review of the most valuable theoretical and experimental results obtained in the center of nanoelectronics and novel materials. Electronic and optical properties of nanostructured porous silicon, quantum films and wires of silicon and ...
V. E. Borisenko
doaj  

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