Emerging single‐element ferroelectrics: From theory to experiment
This review explores recent developments in single‐element ferroelectrics, covering mechanisms of ferroelectric behavior, their crystal structures, key preparation methods, ferroelectric performance characteristics, and promising device applications in field‐effect transistors, photodetectors, and visual perceptrons.
Run Zhao +7 more
wiley +1 more source
The quantum well (QW) realizes new functionalities due to the discrete electronic energy levels formed in the well‐shaped potential. Magnetic tunnel junctions (MTJs) combined with a quasi‐QW structure of Cr/ultrathin‐Fe/MgAl2O4(001)/Fe, in which the Cr ...
Qingyi Xiang +7 more
doaj +1 more source
Interfacial Atomic and Electronic Structures of LSM/YSZ Thin Films as Models for SOC Air Electrodes
Lanthanum–strontium manganite/yttria‐stabilized zirconia thin films serve as model systems for solid oxide cell electrodes, where high‐resolution scanning transmission electron microscopy and X‐ray photoelectron spectroscopy reveal atomistic interfacial features and electronic structure supported by atomistic modeling of these interfaces.
Hebatallah Ali +18 more
wiley +1 more source
THE EVALUATION OF THE TUNNELING MAGNETORESISTANCE MANGANITE- PMMA COMPOSITES [PDF]
Lanthanum-strontium manganite containing composites were synthesized by a warm pressing technique. The LSMO precursor was prepared by modified sol-gel method.
A.V. Vasiliev +3 more
doaj
Tunneling magnetoresistance sensor with pT level 1/f magnetic noise
Magnetoresistive devices are important components in a large number of commercial electronic products in a wide range of applications including industrial position sensors, automotive sensors, hard disk read heads, cell phone compasses, and solid state ...
James G. Deak, Zhimin Zhou, Weifeng Shen
doaj +1 more source
Tunneling Magnetoresistance Transition and Highly Sensitive Pressure Sensors Based on Magnetic Tunnel Junctions with a Black Phosphorus Barrier. [PDF]
Fang H, Li Q, Xiao M, Liu Y.
europepmc +1 more source
Giant tunneling magnetoresistance in two-dimensional magnetic tunnel junctions based on double transition metal MXene ScCr2C2F2. [PDF]
Cui Z +6 more
europepmc +1 more source
Alignment-Free Sensing Module for Absolute and Incremental Lines in Linear Positioning System Based on Tunneling-Magnetoresistance Sensors. [PDF]
Lee CC, Yen YS, Lai CH.
europepmc +1 more source
The exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The
Haiyang Pan +11 more
doaj +1 more source
Nanodimensional semiconductors and dielectrics: achievements of nanoelectronics and novel materials
It is a short review of the most valuable theoretical and experimental results obtained in the center of nanoelectronics and novel materials. Electronic and optical properties of nanostructured porous silicon, quantum films and wires of silicon and ...
V. E. Borisenko
doaj

