Results 171 to 180 of about 14,475 (217)

TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS

International Journal of Modern Physics B, 2004
Taking into account the basic physics of diluted ferromagnetic semiconductors (DMS), we use the tunneling Hamiltonian approach to studying the spin-polarized transport in GaMnAs / AlAs / GaMnAs DMS tunnel junctions. It is found that the splitting, Fermi energies, and the hole concentration for a fixed Mn impurity density vary with temperature, which ...
Tao, Y. C., Hu, J. G.
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Tunnelling Magnetoresistance (TMR)

2021
In the chapter, we have introduced the concept of tunneling magnetoresistance, magnetic tunnel junction (MTJ), and magnetic junctions. A detailed physical explanation behind the phenomenon has also been presented. In this context, quantum mechanical tunneling of conduction electrons, which is at the origin of this phenomenon, has been discussed in the ...
Puja Dey, Jitendra Nath Roy
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Spin-tunneling magnetoresistive sensors

Sensors and Actuators A: Physical, 2000
Abstract Magnetic sensors based on spin-dependent tunneling (SDT) have been theoretically simulated, fabricated, and experimentally tested. In particular, SDT sensors that possess even and odd input–output characteristics have been introduced, designed, and studied.
S.I Kasatkin, P.I Nikitin, A.M Muravjev, V.V Lopatin, F.F Popadinetz, A.V Svatkov, A.Yu Toporov, F.A Pudonin, A.I Nikitin   +8 more
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Tunnel Magnetoresistance Effect

2012
First, both roots of tunnel effect in physics and magnetoresistance are described and then the birth of the term “tunnel magnetoresistance (TMR)” combining tunnel and magnetoresistance is explained. Then, the phenomenological theory of TMR based on Julliere is shown and the comparison among TMR, GMR, and Planner Hall Effect (PHE) is made.
Hanmin Jin, Terunobu Miyazaki
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Tunnelling Anisotropic MagnetoResistance (TAMR)

INTERMAG 2006 - IEEE International Magnetics Conference, 2006
This paper reports on the the discovery of a novel magnetoresistance called tunnelling anisotropic magnetoresistance (TAMR), which may be harnessed for device applications as both volatile and non-volatile memory. TAMR arises when tunnelling into a material with large spin orbit coupling and magnetic anisotropy such as the ferromagnetic semiconductor ...
C. Gould, C. Ruester, G. Schmidt, L. Molenkamp   +3 more
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Analytical investigations of tunnel magnetoresistance layers

Analytical and Bioanalytical Chemistry, 2004
The basic elements of tunnel magnetoresists are two magnetic layers separated by an insulating barrier layer. The uniformity of this only 1-2 nm thick barrier layer up to dot edges and the chemical composition of the layers are properties important for the efficiency of tunnel magnetoresistance devices.
Jürgen, Thomas, Rainer, Reiche, Hartmut, Vinzelberg   +2 more
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Tunneling Magnetoresistance on the Subnanometer Scale

Physical Review Letters, 2007
The influence of the finite thickness and structure, amorphous or crystalline, of Fe electrodes on the tunneling magnetoresistance (TMR) ratio is investigated by ab initio calculations in Fe/MgO/Fe tunnel junctions. An amorphous Fe layer in direct contact with the MgO barrier causes a low TMR ratio of only 44%.
Heiliger, Christian, Gradhand, Martin, Zahn, Peter, Mertig, Ingrid   +3 more
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Tunnel magnetoresistance in polyaniline

Synthetic Metals, 2018
Abstract The single-molecule electric current in polyaniline was investigated by first-principles calculation with a focus on tunnel magnetoresistance (TMR). The electric current in an aniline oligomer contacting two ferromagnetic electrodes was calculated by alternating the relative magnetic direction of the electrodes from parallel to antiparallel ...
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High-Field Tunneling Magnetoresistive Angle Sensor

IEEE Transactions on Magnetics, 2018
Magnetoresistive sensors combined with permanent magnets are becoming increasingly popular for measuring mechanical displacement, velocity, rotation, etc. [1] In the case of magnetic angle sensors, a permanent magnet is attached to a rotating component, such as a shaft, and a magnetoresistive sensor detects the magnetic field change as the permanent ...
James Deak, Insik Jin
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Temperature dependence of tunnel magnetoresistance

Journal of Applied Physics, 2001
Electric transport through magnetic tunnel junctions (MTJs) has been studied at various temperatures to gain understanding of the transport mechanisms in such devices. Between 15 and 400 K, MTJs with Al2O3 barriers have been tested at low voltage (barrier height: 2.0–2.1 eV, barrier width: 1.5 nm).
T. Hagler, R. Kinder, G. Bayreuther
openaire   +1 more source