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Tunnel magnetoresistance of diamondoids
Chemical Physics Letters, 2016Abstract Tunnel magnetoresistance (TMR) of diamondoids has been predicted by first principles density functional theory. Diamantane was used as a basic molecular proxy for diamondoids because hydrogen atoms in the apical position are easily substituted for a thiol group.
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Tunneling magnetoresistance with amorphous electrodes
Physical Review B, 2008A detailed first-principles analysis of the transport properties of different magnetic electrode materials for $\mathrm{MgO}$ tunnel junctions is performed to elucidate the microscopic origin of the tunneling magnetoresistance (TMR) effect. The spin-dependent transport properties of the magnetic materials are analyzed separately from the particular ...
Gradhand, Martin +3 more
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Theory of Tunneling Magnetoresistance
2001Rigorous theory of the tunneling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is decribed. It is applied to calculate the TMR of two Co electrodes separated by a vacuum gap.
J. Mathon, A. Umerski
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Giant tunneling magnetoresistance in silicene
Journal of Applied Physics, 2013We have theoretically studied ballistic electron transport in silicene under the manipulation of a pair of ferromagnetic gate. Transport properties like transmission and conductance have been calculated by the standard transfer matrix method for parallel and antiparallel magnetization configurations. It is demonstrated here that, due to the stray field-
Yu Wang, Yiyi Lou
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Tunneling Anisotropic Magnetoresistance-Based Devices
IEEE Transactions on Electron Devices, 2007The paper demonstrates the operation of several devices based on tunneling anisotropic magnetoresistance. This effect, which originates from the interplay between the magnetic and transport properties in magnetic materials with strong spin-orbit coupling such as the ferromagnetic semiconductor (Ga,Mn)As, leads to a dependence of the tunneling ...
Charles Gould +2 more
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Anti‐Ferromagnet Controlled Tunneling Magnetoresistance
Advanced Functional Materials, 2014The requirement for high‐density memory integration advances the development of newly structured spintronic devices, which have reduced stray fields and are insensitive to magnetic field perturbations. This could be visualized in magnetic tunnel junctions incorporating anti‐ferromagnetic instead of ferromagnetic electrodes.
Yuyan Wang +5 more
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Tunneling magnetoresistance in granular composites
Journal of Applied Physics, 2002The temperature dependence of magnetoresistance in insulating granular systems is studied. At low temperatures the magnetoresistance is enhanced drastically as a result of high-order tunneling. On the other hand, decay of spin polarization will lead to a decrease of magnetoresistance at high temperatures.
Sheng Ju, Zhen-Ya Li
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Tunneling Magnetoresistance: Experiment (MgO Magnetic Tunnel Junctions)
2016A magnetic tunnel junction (MTJ) consists of an ultrathin insulating layer (tunnel barrier) sandwiched between two ferromagnetic (FM) metal layers (electrodes), as shown in Figure 11.1a. e resistance of MTJ depends on the relative magnetic alignment (parallel or antiparallel) of the electrodes.
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment
Ca-A Cancer Journal for Clinicians, 2022Jun J Mao,, Msce +2 more
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