Results 21 to 30 of about 14,475 (217)

Tunneling anisotropic magnetoresistance of helimagnet tunnel junctions [PDF]

open access: yesPhysical Review B, 2010
We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in the tunnel junction and to an effective spin-orbit coupling induced by the topology of the localized magnetic ...
Jia, Chenglong, Berakdar, Jamal
openaire   +2 more sources

Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance [PDF]

open access: yes, 2010
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS.
Gao, Yunfei   +3 more
core   +3 more sources

Intergranular magnetoresistance of strontium ferromolybdate ceramics caused by spin-polarized tunneling

open access: yesOpen Ceramics, 2021
In this work, we develop a model for the description of the low-field magnetoresistance of Sr2FeMoO6−δ ceramics that, for the very first time, is considering the magnetic field dependence of the tunneling barrier height.
Evgenii Artiukh, Gunnar Suchaneck
doaj   +1 more source

Theory of Tunnel Magnetoresistance

open access: yesJournal of the Magnetics Society of Japan, 1998
We present a review of theories of tunnel magnetoresistance (TMR) putting an emphasis on the role of electron scattering due to randomness. We adopt the linear response theory and generalize the conductance formula to calculate the electrical conductance in layered structures.
Jun-ichiro Inoue, Hiroyoshi Itoh
openaire   +3 more sources

Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

open access: yesNew Journal of Physics, 2016
Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant ...
Zhongbo Yan, Shaolong Wan
doaj   +1 more source

Tunneling anisotropic magnetoresistance driven by magnetic phase transition

open access: yesNature Communications, 2017
Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic ...
X. Z. Chen   +18 more
doaj   +1 more source

Coexistence of tunneling magnetoresistance and Josephson effects in SFIFS junctions

open access: yesAIP Advances, 2017
We demonstrate an integration of tunneling magnetoresistance and the Josephson effects within one tunneling junction. Several sets of Nb-Fe-Al-Al2O3-Fe-Nb wafers with varying Al and Fe layers thickness were prepared to systematically explore the ...
O. Vávra   +7 more
doaj   +1 more source

Magnetic memory driven by topological insulators

open access: yesNature Communications, 2021
It remains challenging to integrate topological insulators (TI) with magnetic tunnel junctions (MTJ) for spintronics applications. Here, the authors achieve a large tunneling magnetoresistance ratio and a low switching current density in a TI-MTJ device ...
Hao Wu   +18 more
doaj   +1 more source

Comparison of coherent and weakly incoherent transport models for the interlayer magnetoresistance of layered Fermi liquids [PDF]

open access: yes, 1999
The interlayer magnetoresistance of layered metals in a tilted magnetic field is calculated for two distinct models for the interlayer transport. The first model involves coherent interlayer transport and makes use of results of semi-classical or Bloch ...
A. A. House   +88 more
core   +2 more sources

Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer [PDF]

open access: yesPhysical Review Letters, 2004
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device.
Gould, C.   +8 more
openaire   +3 more sources

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