Results 51 to 60 of about 14,475 (217)

Spin-polarized tunneling through randomly transparent magnetic junctions: Reentrant magnetoresistance approaching the Julliere limit [PDF]

, 2008
Electron conductance in planar magnetic tunnel junctions with long-range barrier disorder is studied within Glauber-eikonal approximation enabling exact disorder ensemble averaging by means of the Holtsmark-Markov method.
B. I. Shklovskii, C. B. Duke, E. McCann, Grigory Tkachov, Klaus Richter, M. Jullière, R. Kubo, T. Miyazaki   +7 more
core   +2 more sources

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

Advanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda, Thor Hvid‐Olsen, Christina Hoegfeldt, Anshu Gupta, Alessandro Palliotto, Fardin Ghaffari‐Tabrizi, Maja A. Dunstan, Kasper S. Pedersen, Dae‐Sung Park, Damon J. Carrad, Thomas Sand Jespersen, Felix Trier   +11 more
wiley   +1 more source

Quasi‐Resonant Tunneling Transport in Magnetic CrBr3

Advanced Physics Research
Tunneling techniques are pivotal for probing 2D magnetic materials. While the Fowler‐Nordheim model describes tunneling in bulk materials through bias‐induced triangular potentials, van der Waals layered systems require special consideration of ...
Gen Long, Peiheng Jiang, Zishu Zhou, Meizhen Huang, Binglan Wu, Zhicheng Zhong, Sunan Ding, Ning Wang, Guangyu Zhang   +8 more
doaj   +1 more source

Tunneling magnetoresistance materials and devices for neuromorphic computing

Materials Futures, 2023
Artificial intelligence has become indispensable in modern life, but its energy consumption has become a significant concern due to its huge storage and computational demands.
Yuxuan Yao, Houyi Cheng, Boyu Zhang, Jialiang Yin, Daoqian Zhu, Wenlong Cai, Sai Li, Weisheng Zhao   +7 more
doaj   +1 more source

The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads

, 2009
We analyze numerically the spin-dependent transport through coherent chains of three coupled quantum dots weakly connected to external magnetic leads. In particular, using the diagrammatic technique on the Keldysh contour, we calculate the conductance ...
Awschalom D D, Barnaś J, Fransson J, Grabert H, Grove-Rasmussen K Jørgensen H I Hayashi T Lindelof P E Fujisawa T, Ireneusz Weymann, König J, Maekawa S, Trocha P, Vernek E Büsser C A Martins G B Anda E V Sandler N Ulloa S E   +9 more
core   +1 more source

Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers [PDF]

Scientific Reports, 2015
AbstractA new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an ...
K. Wang, J. G. M. Sanderink, T. Bolhuis, W. G. van der Wiel, M. P. de Jong   +4 more
openaire   +2 more sources

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

Advanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim, Phuoc Cao Van, Jong‐Ryul Jeong, Hyungyu Jin   +3 more
wiley   +1 more source

Giant magnetoresistance in the variable range hopping regime

, 2013
We predict the universal power law dependence of localization length on magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference.
Ioffe, L. B., Spivak, B. Z.
core   +1 more source

Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

Journal of Superconductivity and Novel Magnetism, 2011
We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ...
Useinov, Arthur, Useinov, Niazbeck Kh H, Tagirov, Lenar R., Kosel, Jürgen   +3 more
openaire   +5 more sources

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source