Results 131 to 140 of about 19,972 (281)

Displacive In‐Plane Ferroelectricity with Domain‐Specific Curie Temperature in Van der Waals Semiconductors

open access: yesAdvanced Science, EarlyView.
Temperature‐dependent electron diffraction on tin monochalcogenides demonstrates a gradual displacive transformation between ferroelectric and paraelectric phases with significant variability in lattice constants and Curie temperature (TC). Periodic variations exist even between domains in individual crystals, implying a domain‐specific Curie ...
Peter Sutter, Eli Sutter
wiley   +1 more source

Deformable Eutectic Alloy With Near‐Theoretical Yield Strength via Hierarchical Nanoscale Multiphases and Sessile Defects

open access: yesAdvanced Science, EarlyView.
A CoCrFeNiTa0.4 eutectic high‐entropy alloy achieves a near‐theoretical yield strength of 2.6 GPa with 13.6% plasticity. This breakthrough stems from a hierarchical nanostructure (FCC‐Laves lamellae with L12/D022 precipitates), which alleviates the inter‐phase modulus/hardness mismatch through synergistic strengthening and toughening, guiding the ...
Yusha Luo   +10 more
wiley   +1 more source

Enhanced Oxygen Redox Activity and Structure Stability of P2‐Type Manganese‐Based Cathodes Through Medium‐Entropy Strategy

open access: yesAdvanced Science, EarlyView.
A medium‐entropy strategy guided by ionic potential is applied to weaken TM─O bonds and suppress Jahn–Teller distortion in P2‐type cathodes, thereby enhancing the oxygen redox activity and structure stability. A medium‐entropy oxide, Na0.8Li0.1Ni0.1Cu0.1Ti0.1Mn0.6O2, demonstrates a high reversible capacity of 223.7 mAh g−1 and an energy density of 616 ...
Dongxiao Wang   +9 more
wiley   +1 more source

Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing

open access: yesAdvanced Science, EarlyView.
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang   +5 more
wiley   +1 more source

Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials

open access: yesAdvanced Science, EarlyView.
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K   +7 more
wiley   +1 more source

Transient Terahertz Oscillations During Photoinduced Polarization Topology Reconfiguration in Ferroelectric Superlattices

open access: yesAdvanced Science, EarlyView.
Terahertz resonances in crystalline heterostructures could close a spectral gap between conventional electronics and photonics while opening new windows on non‐equilibrium lattice dynamics. Femtosecond optical screening of the depolarization field in epitaxial PbTiO3/SrTiO3 superlattices launches a collective polar mode that oscillates near 1 THz and ...
Deepankar Sri Gyan   +13 more
wiley   +1 more source

III-V Multistage Detectors as an Alternative to MCT at Room and Thermoelectric Cooling Temperature (200 K)

open access: yesIEEE Photonics Journal
This paper presents a performance comparison of commonly used mercury cadmium telluride (MCT) detectors and interband cascade infrared photodetectors (ICIPs) based on the InAs/InAsSb type-II superlattice (T2SL – “new wave material” ...
Karol Dabrowski   +4 more
doaj   +1 more source

Outstanding 1200 °C Oxidation Resistance in a Novel Multi‐Principal Element Alloy via Lattice Distortion‐Induced Diffusion Suppression

open access: yesAdvanced Science, EarlyView.
The unique lamellar structure of the eutectic alloy promotes selective oxidation of Al initially, while lattice distortion‐induced diffusion suppression slows oxide growth during steady state. Combining these strategies, a Multi‐Principal Element Alloy with excellent oxidation resistance at 1200℃ was designed.
Xinyu Zhang   +6 more
wiley   +1 more source

Response Time of III-V Multistage Detectors Based on the “Ga-Free” InAs/InAsSb Type-II Superlattice

open access: yesPhotonics
This paper presents a response time/time constant of III-V material-based interband long wavelength multistage infrared detector optimized for a wavelength of 10.6 µm at 200 K. The device is based on the InAs/InAsSb type-II superlattice with highly doped
Karol Dąbrowski   +2 more
doaj   +1 more source

Home - About - Disclaimer - Privacy