Results 141 to 150 of about 19,972 (281)

Quasi‐Antipolar Nanoclusters Driven Superior Energy Storage in High‐Entropy Relaxor Ferroelectrics

Advanced Science, EarlyView.
Quasi‐antipolar nanoclusters are engineered in lead‐free NaNbO3‐based high‐entropy relaxors that weaken polar nanoregion coupling and induce distinct ferroelectric transition under high fields to enable desirable polarization response. This breakthrough system achieves ultrahigh recoverable‐energy‐density (≈18.3 J cm−3), efficiency (≈91.5%), and ...
Ao Tian, Zehao Li, Qingkang Jiang, Xiang Wu, Xuewen Jiang, Xin Gao, Xiaokuo Er, Mohamed Mahmoud, Maqbool Ur Rehman, Liqiang Liu, Aiwen Xie, Tengfei Hu, Ruzhong Zuo   +12 more
wiley   +1 more source

High‐Order Nonlinear Photonic Crystal with Ordered Structures for Giant Enhancement of Frequency Tripling

Advanced Science, EarlyView.
A meta‐YAG crystal with artificially order/disorder structures was fabricated to realize the efficient third‐harmonic generation at 343 nm with a conversion efficiency of 4.5×10−3, surpassing six orders of magnitude compared to bulk YAG crystal. Moreover, a wide spectral tunability from 331 to 356 nm was also achieved in the meta‐YAG, indicating its ...
Xiaotian Guo, Qiaoling Han, Fei Liang, Bin Zhang, Dazhi Lu, Haohai Yu, Huaijin Zhang   +6 more
wiley   +1 more source

On the Ordering Mechanism of Cu+ in 2D van der Waals Multiferroic CuCrP2S6

Advanced Science, EarlyView.
Temperature‐dependent X‐ray single‐crystal diffuse scattering measurements of CuCrP2S6 in the (H, K, 0) plane reveal the gradual emergence and strengthening of short‐range order upon cooling from 230 to 170 K. At intermediate temperatures, diffuse features become pronounced and eventually lock into sharp incommensurate satellite reflections, indicating
Jiasen Guo, Yongqiang Cheng, Michael A. Susner, Ryan P. Siebenaller, Zachary Morgan, Feng Ye   +5 more
wiley   +1 more source

13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD

APL Photonics
In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition.
Richard Brown, Chen Liu, George Seager, Francisco Alvarado, Ka Ming Wong, Adam P. Craig, Richard Beanland, Andrew R. J. Marshall, J. Iwan Davies, Qiang Li   +9 more
doaj   +1 more source

Polymorphic Superparaelectric Engineering Boosting Energy Storage Capacity in BaTiO3‐Based Ceramics

Advanced Science, EarlyView.
Herein, Ca2+ incorporation promotes the coexistence of CaTiO3‐/BaTiO3‐derived paraferroelectric states, stabilizing cubic‐orthorhombic‐tetragonal polymorphic superparaelectric phases. This minimizes polarization energy barriers, facilitating full polarization saturation without compromising efficiency.
Pan Liu, Xiang Ren, Jin Qian, Haihua Huang, Peng Li, Peng Fu, Jigong Hao, Huarong Zeng, Wei Li, Zhenxiang Cheng   +9 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Advancing Energy Materials by In Situ Atomic Scale Methods

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss, Michael Seibt, Martin Wenderoth, Oliver Bünermann, Ole Bunjes, Till Domröse, Christian Eckel, Francesca Falorsi, Christoph Flathmann, Monica Kolek Martinez de Azagra, Matthias Krüger, Jonas Lindner, Tobias Meyer, Claus Ropers, Ulrich Ross, Kai Rossnagel, Sreeju Sreekantan Nair Lalithambika, Simone Techert, Georg A. Traeger, Cynthia Volkert, R. Thomas Weitz, Alec M. Wodtke   +21 more
wiley   +1 more source

Aqueous Zinc‐Based Batteries: Active Materials, Device Design, and Future Perspectives

Advanced Energy Materials, EarlyView.
This review conducts a comprehensive analysis of aqueous zinc‐based batteries (AZBs) based on their intrinsic mechanisms, including redox reactions, ion intercalation reactions, alloying reactions, electrochemical double‐layer reactions, and mixed mechanisms, systematically discussing recent advancements in each type of AZBs.
Yan Ran, Fang Dong, Shuhui Sun, Yong Lei
wiley   +1 more source