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On the existence of \((v,k,t)\) trades [PDF]
Australas. J Comb., 1992 A \((v,k,t)\) trade of volume \(s\) consists of two disjoint collections \(T_ 1\) and \(T_ 2\) each of \(s\) blocks of size \(k\) from a \(v\) element set \(V\) such that for every \(t\)-subset, the number of blocks containing this subset is the same in both \(T_ 1\) and \(T_ 2\).
Ebadollah S. Mahmoodian +1 more
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Journal of Statistical Planning and Inference, 2000
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Ling, C. H. A. +3 more
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zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Ling, C. H. A. +3 more
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Canadian Electrical Engineering Journal, 1986
In MOS circuits, there is a need to generate a voltage equal to the threshold voltage VT of the MOSFETs and a current equal to KVT2 (where K is the conduction parameter of a MOSFET) for the purposes of supply-independent biasing and temperature compensation. A circuit which generates these quantities is presented.
T. R. Viswanathan, K. Nagaraj
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In MOS circuits, there is a need to generate a voltage equal to the threshold voltage VT of the MOSFETs and a current equal to KVT2 (where K is the conduction parameter of a MOSFET) for the purposes of supply-independent biasing and temperature compensation. A circuit which generates these quantities is presented.
T. R. Viswanathan, K. Nagaraj
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V to T Reconstruction of Anterior Lamellar Eyelid Defects
Ophthalmic Surgery, Lasers and Imaging Retina, 1989ABSTRACT A new method to reconstruct anterior lamellar pretarsal lid lesions is described. The cosmetic and functional results were excellent in all 12 patients. This method minimizes postoperative lid malposition.
J, Harvey, S, Corin
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On the structure of (v,k,t) trades
Journal of Statistical Planning and Inference, 1986Let V be a set of v treatments. Then \(v\Sigma\) t is the collection of all t-subsets of V.
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International Law Reports, 1961
Belligerent Occupation — Legislative Functions of Occupant — Legislation Affecting Private Property — Whether Lawful — Article 43 of Hague Regulations of 1907 — Invasion and Occupation in Contravention of General Treaty for Renunciation of War, 1928 — Whether State Committing Such Invasion Entitled to Rights of a Belligerent Occupant — Law in Force in ...
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Belligerent Occupation — Legislative Functions of Occupant — Legislation Affecting Private Property — Whether Lawful — Article 43 of Hague Regulations of 1907 — Invasion and Occupation in Contravention of General Treaty for Renunciation of War, 1928 — Whether State Committing Such Invasion Entitled to Rights of a Belligerent Occupant — Law in Force in ...
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V region T cell receptor repertoire in Parkinson's disease
Acta Neurologica Scandinavica, 2009Restricted usage of V alpha and beta genes has been found in several diseases, which exert autoreactive T cells. So far no information on T cell receptor (TCR) usage in degenerative diseases is available. Since T cells may be involved in pathogenesis of Parkinson's disease, the analysis of the TCR repertoire is of importance.We have tested the ...
U, Fiszer +4 more
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The Lancet Respiratory Medicine, 2019
BACKGROUND Benralizumab is an interleukin-5 receptor α-directed cytolytic monoclonal antibody that has been shown to safely reduce exacerbations and improve lung function for patients with asthma.
William W. Busse +458 more
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BACKGROUND Benralizumab is an interleukin-5 receptor α-directed cytolytic monoclonal antibody that has been shown to safely reduce exacerbations and improve lung function for patients with asthma.
William W. Busse +458 more
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V-fairness (t, n) secret sharing scheme
IEE Proceedings - Computers and Digital Techniques, 1997All secret sharing schemes proposed to date are not really fair on reconstructing a secret since there exists a probability /spl epsiv/, /spl epsiv/>0, such that a dishonest shareholder can obtain the secret while honest ones cannot. The paper proposes a V-fairness (t, n) secret sharing scheme, VFSS scheme, such that all shareholders have an equal ...
C.-S Laih, Y.-C Lee
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IEEE Transactions on Instrumentation and Measurement, 1991
Based on a V/sub T/-sift circuit, a new characterization technique is presented with which the value of both K, the transconductance constant, and V/sub T/, the device threshold voltage, of an MOS transistor can be measured directly, obtained from the drain current of the device to be tested and the voltage difference between the output and input nodes
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Based on a V/sub T/-sift circuit, a new characterization technique is presented with which the value of both K, the transconductance constant, and V/sub T/, the device threshold voltage, of an MOS transistor can be measured directly, obtained from the drain current of the device to be tested and the voltage difference between the output and input nodes
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