Results 111 to 120 of about 9,573 (261)

Wafer‐Scale Self‐Limiting Epitaxy of Bernal‐Stacked Single‐Crystal Boron Nitride

open access: yesSmall, EarlyView.
Wafer‐scale, single‐crystal Bernal‐stacked boron nitride (bBN) bilayers are grown by flow‐modulated MOCVD, where monoatomic Ni step edges on Ni(111) deterministically direct AB stacking. As an ultrathin interlayer, bBN suppresses interfacial scattering and enables robust, nonvolatile polarization switching in MoS2 channels, offering a scalable platform
Jaewon Wang   +22 more
wiley   +1 more source

Domain engineered gallium oxide phototransistors enabling intelligent ultraviolet vision with dynamic gating

open access: yesInfoMat, Volume 8, Issue 5, May 2026.
Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim   +9 more
wiley   +1 more source

Ammonia Offgassing from SA9T [PDF]

open access: yes, 2011
NH3 is a degradation product of SA9T, a solid-amine sorbent developed by Hamilton Sundstrand, that is continually emitted into the gas stream being conditioned by this sorbent. NH3 offgassing rates were measured using FTIR spectroscopy using a packed bed
Monje, Oscar   +2 more
core   +1 more source

High‐mobility suspended MoS2 devices with tunable threshold voltage

open access: yesInfoMat, Volume 8, Issue 5, May 2026.
Due to their atomic‐scale thickness, two‐dimensional materials (2DMs) are highly sensitive to their environment, including the substrate. By fabricating various suspended molybdenum disulfide devices, this study demonstrates that the suspended structure can shield the influence of the substrate on the properties of 2DMs, thereby enabling better ...
Jiahao Yan   +17 more
wiley   +1 more source

Hydrogen and Oxygen Defect Engineering in Amorphous‐IGZO Thin‐Film Transistors by Rapid Thermal Annealing Ambient

open access: yesphysica status solidi (a), Volume 223, Issue 8, 22 April 2026.
This study investigates how rapid thermal annealing atmospheres control defect dynamics in amorphous IGZO thin‐film transistors with HfO2 dielectrics deposited by thermal atomic layer deposition. The interplay among hydrogen interstitials, oxygen interstitials, and oxygen vacancies are shown to govern device stability under positive/negative bias ...
Dipon Kumar Ghosh   +3 more
wiley   +1 more source

Rapid screening of CO2-selective zeolites, carbons and MOFs by Five-step vacuum swing adsorption performances estimated with equilibrium theory analysis

open access: yesResources Chemicals and Materials
It was aimed to evaluate a variety of conventional and emerging CO2-selective adsorbents, considering their use in a five-step VSA (Vacuum Swing Adsorption) system for flue gas capture.
Yixuan Zhang, Hyungwoong Ahn
doaj   +1 more source

Modeling the extra-column volume in a small column setup for bulk gas adsorption [PDF]

open access: yes, 2018
This study aims at highlighting the importance of an accurate characterization of the extra-column volume (ECV) and presents an experimental and computational protocol based on the characterization of the extra-column volume in terms of step-response ...
Joss, Lisa, Mazzotti, Marco
core  

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