Results 271 to 280 of about 80,867 (311)

The valence band of graphite monofluoride

Chemical Physics Letters, 1974
Abstract Good agreement is shown to exist between the theoretically computed (modified extended Huckel) and the experimentally determined (X-ray photoelectron spectroscopy) density-of-states for graphite monofluoride.
D.E. Parry, J.M. Thomas, B. Bach, E.L. Evans   +3 more
openaire   +1 more source

Valence-band discontinuity at the interface

Journal of Physics: Condensed Matter, 1999
The growth of fullerene films on surfaces and the formation of the interface was studied using low-energy electron diffraction, Auger electron spectroscopy and x-ray as well as ultraviolet photoemission spectroscopy. The initial growth of proceeds layer-by-layer. No chemical reactions or interdiffusion were observed.
O Janzen, W Mönch
openaire   +1 more source

Valence Bands in Lead Telluride

Journal of Applied Physics, 1961
The magnetic field dependence of the Hall coefficient at 296° and 77°K, and the temperature dependence of the weak-field Hall coefficient and the resistivity between 296° and 77°K were studied in single-crystal samples of p-type PbTe having carrier concentrations ranging from 4.9×1017 to 1.7×1019 per cm3.
openaire   +1 more source

Valence band offset at the CdS/CdTe interface

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002
Wurtzite CdS was grown by molecular beam epitaxy on CdTe(1̄1̄1̄)B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe(1̄1̄1̄)B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A.
Boieriu, P., Sporken, Robert, Sivananthan, S.   +2 more
openaire   +1 more source

Valence band structure of SnTe

Journal of Physics D: Applied Physics, 1968
Room-temperature electrical and thermal properties of p-type SnTe for the carrier concentration range 4 × 1019-2 × 1021 cm−3 have been quantitatively explained using a two-valence-band model in which the principal light mass band is always highly non-parabolic and the heavy mass band is parabolic. Band parameters of the model were determined.
openaire   +1 more source

Spin polarization of valence band satellites of nickel

Journal of Electron Spectroscopy and Related Phenomena, 1996
We have observed spin- and angle-resolved photoemission spectra of Ni(110) in the whole valence band region including so-called 6 eV, 9 eV and 13 eV satellites. It was found that the spin polarization of the satellites are well explained by the atomic model, while the 3d valence band widths in the majority and minority spin states are consistent with ...
K. Ono, A. Kakizaki, K. Shimada, Y. Saitoh, S. Qiao, T. Ishii, K. Tanaka, T. Sendohda, H. Fukutani   +8 more
openaire   +1 more source

Effects of Substrate Orientation on the Valence Band Splittings and Valence Band Offsets in GaN and AlN Films

MRS Proceedings, 1997
AbstractWe present a first-principles study of heteroepitaxial interfaces between GaN and both cubic as well as wurtzite AlN substrates oriented along main cubic or hexagonal directions and of stacking fault interfaces between cubic and wurtzite GaN. Our calculations show that all studied heterostructures are of type I. Valence band offsets for GaN/AlN
J. A. Majewski, M. Städele
openaire   +1 more source

Deformation potentials at the valence-band maximum in semiconductors

Physical Review B, 1987
The deformation potentials ${d}_{0}$ and d' are calculated for 22 elemental and compound semiconductors. The calculations are based on the self-consistent relativistic linear combination of muffin-tin orbitals band-structure method. It is demonstrated that perturbations caused by strain-induced changes in the nonspherical potential are significant ...
, Brey, , Christensen, , Cardona
openaire   +2 more sources

Valence band structure of germanium

Proceedings of the Physical Society, 1965
The absorption produced by direct inter-valence band transitions provides a sensitive test for the calculated valence band shapes. A calculation by Kane of the valence band shapes of p-type germanium near k = 0 using second-order degenerate k. p perturbation theory and of the resulting absorption spectrum indicated that the mass of the split-off ...
openaire   +1 more source

Optical Determination of the Valence-Band Parameters in CdTe

physica status solidi (b), 1984
AbstractThe set of valence‐band parameters μ, Δ, R0, introduced in the Baldereschi‐Lipari model allows the determination of several energy levels of shallow acceptors in a semiconductor. A critical examination of the methods of determining these parameters is presented.
G. Milchberg, K. Saminadayar, E. Molva, H. R. Zelsmann   +3 more
openaire   +1 more source