Results 181 to 190 of about 9,744 (208)

Semiconductor Surface Varactor

Bell System Technical Journal, 1962
The semiconductor varactor using surface space charge is analyzed and measurements made on several experimental units are described. The chief characteristics of this device are its capacity-voltage dependence and its negligible dc conduction. The particular system used in this work is a thermally grown oxide on silicon.
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High-frequency surface varactors

IEEE Transactions on Electron Devices, 1963
Experimental surface varactors constructed from germanium and silicon, with titanium dioxide films as a dielectric, are described. Measurements have been made to determine their behavior at frequencies up to 9 kMc. The capacitance ratio and specific capacitance change are in good agreement with the theory of surface varactors.
A.E. Feuersanger, D.R. Frankl
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RF Power Insensitive Varactors

IEEE Microwave and Wireless Components Letters, 2012
In this letter, the influence of the RF voltage swing on the effective capacitance of continuously tunable capacitive devices, e.g., varactors, is investigated. Using Volterra series, equations are derived that describe the change in effective capacitance versus RF voltage, which are in agreement with simulations and have been verified by measurements.
Koen Buisman, Cong Huang, Peter J. Zampardi, Leo C. N. de Vreede   +3 more
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Varactor diode series resistance†

International Journal of Electronics, 1973
Abstract Experimental work is described which indicates that in contrast with earlier evidence there is no significant frequency-dependence of the series loss resistance Rs of silicon varactor diodes in the u.h.f. band. The results were obtained from aeries—resonance measurements specifically made for determining Rs, and also of measurements in ...
S. H. AL-CHARCHAFCHI, F. J. HYDE
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Optically Modulated High-Sensitivity Heterostructure Varactor

IEEE Electron Device Letters, 2006
The selection of the optimal sensors to use in an electronic nose is fundamental to the success or failure of any particular olfactory system in a certain application. The experimentation and characterization of gas sensors require complex electronic noses designed for the specific sensor array under test.
Zhao X, Cola A, Tersigni A, Quaranta F, Gallo E, Spanier JE, Nabet B   +6 more
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Varactor Q Measurement (Correspondence)

IEEE Transactions on Microwave Theory and Techniques, 1971
A technique is presented for measuring the Q of a varactor diode junction when external loss is present. No tuning of the test mount is required, and the need for separate capacitance measurements is eliminated. A numerical data processing technique is illustrated which permits rapid determination of the Q from the measured data.
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Varactor S-Band Direct Phase Modulator

IEEE Journal of Solid-State Circuits, 1966
This paper describes the design technique and the test results for an S-band direct phase modulator with extremely linear phase characteristics. A modulation index of 2.4 radians (300/spl deg/ phase variation) with a phase distortion of less than 0.5 percent was obtained at 2.2 GHz. The modulator consisted of two cascaded stages, each stage employing a
C. Kim, J. Borer, C. Lee
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The space-charge varactor

Solid-State Electronics, 1965
Abstract A simplified theory and design analysis is presented for the space-charge varactor. Under conditions of forward and reverse bias, the device possesses constant but different values of incremental capacitance, and switches rapidly from one state to the other as the applied voltage changes polarity.
D.P. Howson, B. Owen, G.T. Wright
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Wideband Varactor Harmonic Multipliers

G-MTT Symposium Digest, 2005
The basic circuit criteria for designing efficient narrowband harmonic multipliers are well established. For the case of the shunt-connected diode, ideal falters are usually specified that pass desired harmonics, reject others by having an infinite input impedance, and provide zero impedance paths for idler harmonics.
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HIGH Q VARACTOR DIODES

1963
Abstract : Low pump power varactor diodes have been fabricated using epitaxial GaAs. Frequency cut-offs as high as 785 kmc have been obtained at break down. A detailed analysis of the parameters in influencing point-contact GaAs varactors is given. The results of a basic program to determine the feasibility of employing high energy gap semi conductors ...
R. O. Bell, A. I. Mlavsky, Martin Weinstein   +2 more
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