Results 191 to 200 of about 4,146 (226)
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HIGH Q VARACTOR DIODES

1963
Abstract : Low pump power varactor diodes have been fabricated using epitaxial GaAs. Frequency cut-offs as high as 785 kmc have been obtained at break down. A detailed analysis of the parameters in influencing point-contact GaAs varactors is given. The results of a basic program to determine the feasibility of employing high energy gap semi conductors ...
R. O. Bell   +2 more
openaire   +1 more source

GALLIUM ARSENIDE VARACTOR DIODES

1963
Abstract : Emphasis was placed on fabricating very high cutoff frequency diodes having breakdown voltages in excess of 6 v. Devices were fabricated using both melt-grown GaAs and epitaxial material. The results indicate that the highest cutoff frequencies were achieved using melt grown GaAs and that the best devices fabricated have cutoff frequencies ...
G. A. Kupsky, H. Kressel
openaire   +1 more source

Indium antimonide varactors

IEEE Transactions on Electron Devices, 1963
C.M. Allen, P.R. Liegey, B. Salzberg
openaire   +1 more source

Varactor Diode

IETE Journal of Education, 1971
openaire   +1 more source

Varactor applications

Journal of the Franklin Institute, 1963
openaire   +1 more source

Thin film MIS varactor

Physica Status Solidi (a), 1971
openaire   +1 more source

Variable Reflection-Type Attenuators Based on Varactor Diodes

IEEE Transactions on Microwave Theory and Techniques, 2012
Senad Bulja, Andrei Grebennikov
exaly  

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