Results 191 to 200 of about 4,146 (226)
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1963
Abstract : Low pump power varactor diodes have been fabricated using epitaxial GaAs. Frequency cut-offs as high as 785 kmc have been obtained at break down. A detailed analysis of the parameters in influencing point-contact GaAs varactors is given. The results of a basic program to determine the feasibility of employing high energy gap semi conductors ...
R. O. Bell +2 more
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Abstract : Low pump power varactor diodes have been fabricated using epitaxial GaAs. Frequency cut-offs as high as 785 kmc have been obtained at break down. A detailed analysis of the parameters in influencing point-contact GaAs varactors is given. The results of a basic program to determine the feasibility of employing high energy gap semi conductors ...
R. O. Bell +2 more
openaire +1 more source
GALLIUM ARSENIDE VARACTOR DIODES
1963Abstract : Emphasis was placed on fabricating very high cutoff frequency diodes having breakdown voltages in excess of 6 v. Devices were fabricated using both melt-grown GaAs and epitaxial material. The results indicate that the highest cutoff frequencies were achieved using melt grown GaAs and that the best devices fabricated have cutoff frequencies ...
G. A. Kupsky, H. Kressel
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IEEE Transactions on Electron Devices, 1963
C.M. Allen, P.R. Liegey, B. Salzberg
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C.M. Allen, P.R. Liegey, B. Salzberg
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Variable Reflection-Type Attenuators Based on Varactor Diodes
IEEE Transactions on Microwave Theory and Techniques, 2012Senad Bulja, Andrei Grebennikov
exaly

