Results 91 to 100 of about 142,661 (163)
In this paper, a novel reconfigurable linearly polarized ultrathin unit cell design for lens applications at Ka-band frequencies (26-28.75 GHz) is presented.
Zohre Pourgholamhossein +1 more
doaj +1 more source
This paper presents compact UWB cylindrical dielectric resonator antenna with reconfigurable band notch capability using single varactor diode. Theoretical results are achieved for the design with the range of frequencies 4-10.6 GHz.
Elkorany, A. S. +2 more
core +1 more source
Varactor tuned dual-band Wilkinson power divider
In this paper varactor tuned dual-band Wilkinson power divider for dual band applications is presented. A new power divider circuit for dual-band operation was modified by adding varactor diodes as tunable elements.
Budimir, D., Draskovic, D.
core
K-Band Varactor Diode-Tuned Elliptical Slot Antenna for Wideband Imaging
Small resonant elliptical slot antennas have shown great potential as imaging array elements at microwave frequencies. For high-resolution 3D imaging applications it is desirable to extend the operational frequency bandwidth of these elements. One way to
Ghasr, Mohammad T. +10 more
core +1 more source
Progress in Heterostructure Barrier Varactor Frequency Multipliers
The Heterostructure Barrier Varactor diode and its performance as a varactor frequency multiplier is ...
Dillner, Lars +4 more
core
A novel reconfigurable equal to unequal Wilkinson power divider is presented. The proposed power divider adopts coupled microstrip line technique to implement a high impedance section to have unequal output power ratio. A varactor diode is placed between
Ali, A. H. +6 more
core +2 more sources
Switching characteristics of the varactor-diode parametron
Thesis: M.S., Massachusetts Institute of Technology, Department of Electrical Engineering, 1960 ; Includes bibliographical references (leaves 117-119). ; by Charles Edward Woodward. ; M.S. ; M.S.
openaire +1 more source
Physical Device Modeling of a Varactor Diode
Starting with the recipe for the fabrication process of a silicon p-n junction varactor diode, the semiconductor device equations are solved using the finite-element method. The capacitance of the reverse biased diode is extracted using the junction depletion width which is quantified by introducing a depletion factor.
Masidlover, Alexander R. +1 more
openaire +3 more sources

