Results 181 to 190 of about 4,662 (208)
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Design considerations of hyperabrupt varactor diodes
IEEE Transactions on Electron Devices, 1971This paper describes the design calculations and fabrication techniques used to produce hyperabrupt varactor diodes. The computation consists of determining, the doping profile, the capacitance as a function of applied voltage, the breakdown voltage, and the series resistance; allowance is made for the nonlinear variation of mobility with doping ...
P.J. Kannam, S. Ponczak, J.A. Olmstead
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Evaluation of high quality varactor diodes
Radio and Electronic Engineer, 1966Recent measurement procedures used between 1 Mc/s and 40 Gc/s in evaluating very high cut-off frequency varactor diodes are discussed. The types of measurement are: bridge measurements at low frequencies, microwave coaxial line measurements, a transmission method near the diode series-resonant frequency, and a transmission method at diode parallel ...
D.A.E. Roberts, K. Wilson
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Control of Parameters of Varactor Diodes
IETE Journal of Research, 1969The important parameters of a diffused silicon varactor diode are related to process parameters. Each processing step is analysed for yield and spread in the process parameters it controls. The final yield of the fabrication process and the spread in the device parameters involve yield and spread for each step. Practical results show that the yield and
W. S. Khokle, A. K. Ray
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1993
Semiconductor diodes were one of the first electronic components for ensuring the basic function of RF detection, and they are still used for that purpose (as well as for mixers) even if galena (natural PbS) has been replaced by Silicon and by gallium arsenide, and the Schottky technology has definitively taken the place of the ancient ‘cat’s whisker ...
C. Straelhi, J. V. Bouvet, D. Goral
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Semiconductor diodes were one of the first electronic components for ensuring the basic function of RF detection, and they are still used for that purpose (as well as for mixers) even if galena (natural PbS) has been replaced by Silicon and by gallium arsenide, and the Schottky technology has definitively taken the place of the ancient ‘cat’s whisker ...
C. Straelhi, J. V. Bouvet, D. Goral
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A varactor diode based predistortion circuit
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004Operation and performance of a varactor diode based linearizer is investigated. This novel predistortion topology employs a series resonant circuit with a reverse biased varactor diode acting as a power dependant capacitor. The linearizer itself is both simulated and tested to display its nonlinear properties.
N. Gupta, A. Tombak, A. Mortazawi
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A TV tuner using varactor diodes†
International Journal of Electronics, 1974Design procedures for a TV tuner using varactor diodes are given. The problem of conflicting needs between power matching and noise figure matching is presented. Experimental results obtained agree well with theoretical values. The measured noise figure of the tuner is 4.5 dB.
MAHAPATRS, JAIN, MR
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Microwave Applications of Diodes, Varactors and Tunnel Diodes
1980Diodes provide many circuit functions (e. g., detection of signals, modulation of carrier frequencies with signal frequencies and subsequent demodulation) at high frequencies. Diodes are also used as RF switches and as harmonic generators for efficient frequency multiplication.
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Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes
Journal of Physics: Condensed Matter, 2008Frequency multipliers based on the single-barrier and double-barrier InN/GaN heterostructure varactor diodes are suggested. The DC and large-signal AC vertical electron transport in the InN/GaN diodes are investigated by ensemble Monte Carlo simulations.
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Efficient heterostructure doped-barrier varactor diodes
Journal of Applied Physics, 2009Doped-barrier heterostructure varactor diodes are suggested for efficient frequency multiplication of the microwave radiation. It is shown that the efficiency of the heterostructure-barrier varactor is significantly enhanced if the undoped barrier is replaced by the doped one. The analysis is carried out using Boltzmann statistics.
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Variable Bandpass Filters Using Varactor Diodes
IEEE Transactions on Microwave Theory and Techniques, 1981A rectangular waveguide type variable bandpass filter for the 4-GHz bandpass has been proposed and tested. The bandpass width varies from 260 MHz to 1.02 GHz for a filter using varactor diodes. Two microstrip variable bandpass filters for the 6-GHz and 4-GHz bands are also proposed and tested.
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