Results 61 to 70 of about 1,302 (222)

AlGaN/GaN varactor diode for integration in HEMTcircuits

Electronics Letters, 2001
The fabrication and characterisation of metal-semiconductor-metal (MSM) diodes above an AlGaN/GaN HEMT layer system for varactor applications are reported. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques. Capacitance-voltage measurements exhibit
MARSO, Michel, Wolter, M., Javorka, P., Fox, A., Kordoš, P.   +4 more
openaire   +2 more sources

Neural Network–Assisted Metasurface Retroreflector With Wide‐Angle Adaptivity

Electron, Volume 4, Issue 2, May 2026.
This work proposes a wide‐angle, multi‐polarization, self‐sensing, and self‐adaptive intelligent metasurface retroreflector, with a planar profile and ultrathin thickness. By integrating a pre‐trained artificial neural network (ANN), the metasurface retroreflector can recognize the incident angle and promptly adapt to changes in the incoming wave.
Jing Ning, Xunfan Wang, Kun Duan, Weixu Yang, Junming Zhao, Tian Jiang, Ke Chen, Yijun Feng   +7 more
wiley   +1 more source

Dynamic Multifunctional Metasurfaces Based on Passive Cascade Structure

Electron, Volume 4, Issue 2, May 2026.
A dynamic multifunctional metasurface is proposed in this paper. Unlike mainstream multifunctional metasurface based on programmable metasurfaces, it consists of two passive metasurfaces, presenting a significant cost advantage. By controlling the displacement, different functions such as beam steering, focusing, and OAM wave generation can be realized
Xiangming Wu, Yifeng Wang, Haoyang Shi, Jie Tian, Xiong Wang, Weiren Zhu   +5 more
wiley   +1 more source

Varactor-Based Continuously Tunable Microstrip Bandpass Filters: A Review, Issues and Future Trends

IEEE Access
Electronically tuned bandpass filters are crucial frequency-selective devices in tunable RF front-ends and are extensively utilized in the fields of communications and sensing.
Mengjie Qin, Zhongmao Li, Zhipeng Ren, Pengzhan Liu, Lanlan Liao, Xin Qiu, Zhiqiang Li   +6 more
doaj   +1 more source

Intelligent materials for on‐demand electromagnetic absorption

InfoMat, Volume 8, Issue 5, May 2026.
This review introduces an innovative “stimulus‐state‐property” paradigm, facilitating a fundamental transition from static to dynamically intelligent electromagnetic wave absorption (EMWA). The key advancement lies in the synergistic integration of external fields with structurally engineered metamaterials and tunable components.
Chongyang Chai, Lin Yang, Haoxu Si, Bo Hao, Yi Zhang, Cuiping Li, Jingwei Zhang, Chunhong Gong   +7 more
wiley   +1 more source

Ultra-wideband bandpass microstrip filter with electronically tunable notch-band

e-Prime: Advances in Electrical Engineering, Electronics and Energy
This paper introduces a compact ultra-wideband (UWB) microstrip filter featuring both a fixed and an electronically tunable notch band. Operating within the frequency range of 3.27 GHz to 5.61 GHz, the filter incorporates a permanent notch at 4.08 GHz ...
Dattatray S. Bade, Sudhakar S. Mande
doaj   +1 more source

A varactor tuned low-cost 24 GHz harmonic VCO [PDF]

Advances in Radio Science, 2006
We present a low-cost 24 GHz VCO that is based on a microstrip design combined with discrete packaged devices. The output frequency is generated by a harmonic oscillator. The tunabilty was reached using a varactor diode.
M. O. Olbrich, L. Huang, E. M. Biebl
doaj  

A miniaturized microstrip antenna with tunable double band-notched characteristics for UWB applications

Scientific Reports, 2022
This paper proposes the step-by-step design procedure for obtaining independent dual band-notch performance, which provides a valuable method for designing tunable dual band-notched UWB antenna.
Zhang Chao, Zhao Zitong, Xiao Pei, Yu Jie, Liu Zhu, Li Gaosheng   +5 more
doaj   +1 more source

Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas

, 2017
It is not in principle clear which of the capacitors forming a varactor is responsible for the capacitance change at the transition voltage. We analyzed a theoretical case of transition voltage of the varactor formed by ideal Schottky diodes.
L. Chow, N.C. Chen, Osvald, J., Vanko, G., Chow, L., L.B. Chang, J. Osvald, Chen, N. C., G. Vanko, Chang, L. B.   +9 more
core   +1 more source

Limitations in THz Power Generation with Schottky Diode Varactor Frequency Multipliers [PDF]

, 2002
We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of ...
Loata, G., Krozer, Viktor, Grajal, J.
core   +1 more source