Results 161 to 170 of about 31,144 (250)

Azobenzene's Cross‐Scale Optics and Photonics: Molecular Photoswitching, Mesoscopic Material Motions, and Adaptive Devices

open access: yesAdvanced Materials, EarlyView.
Azobenzene photoswitches translate molecular‐scale E/Z photoisomerization into macroscopic material responses and device‐level photonic functions. This Review highlights how azobenzene research has evolved from molecular photochemistry to photoalignment, mass migration, photomechanics, and heat release, ultimately enabling holography, reconfigurable ...
Heeju Son   +20 more
wiley   +1 more source

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

open access: yesAdvanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh   +2 more
wiley   +1 more source

Phase Boundary Engineering of Co2P‐CoP Branched Nanoparticles Enhances Cobalt Oxidation for Oxygen Evolution Electrocatalysis

open access: yesAdvanced Materials, EarlyView.
Phase boundaries between Co2P and CoP are constructed through a controlled transformation of Co to Co2P‐CoP branched nanoparticles. The polycrystalline mixed‐phase Co2P‐CoP branches are enriched with phase boundaries that stabilize Co active sites for OER. This work highlights phase boundary engineering as a powerful approach to tailor active sites and
Zeno R. Ramadhan   +10 more
wiley   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

open access: yesAdvanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae   +13 more
wiley   +1 more source

Measuring the Hall Effect in Hysteretic Materials

open access: yesAdvanced Materials, EarlyView.
The authors highlight common pitfalls in measuring the Hall effect: in hysteretic magnets, improper data processing can create signals that look exotic but are not real. This Perspective explains the origin of these artifacts and presents practical measurement strategies that help researchers identify reliable Hall responses in complex magnetic ...
Jaime M. Moya   +6 more
wiley   +1 more source

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