Results 181 to 190 of about 13,663 (209)
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2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest., 2006
We present a novel electrostatic actuated nano-electromechanical (NEMS) tunable surface emitting lasers utilizing a movable single-layer large-index-contrast subwavelength grating.
M.C.Y. Huang +2 more
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We present a novel electrostatic actuated nano-electromechanical (NEMS) tunable surface emitting lasers utilizing a movable single-layer large-index-contrast subwavelength grating.
M.C.Y. Huang +2 more
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SPIE Proceedings, 1999
The Hot Electron Light Emitting and Lasing Semiconductor Heterostructure (HELLISH) vertical cavity surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel to the layers of Ga x Al 1-x As p - n junction. The fabrication of these devices is very simple and requires only two top contacts that are diffused throughout the ...
Naci Balkan +7 more
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The Hot Electron Light Emitting and Lasing Semiconductor Heterostructure (HELLISH) vertical cavity surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel to the layers of Ga x Al 1-x As p - n junction. The fabrication of these devices is very simple and requires only two top contacts that are diffused throughout the ...
Naci Balkan +7 more
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SPIE Proceedings, 2002
We compare various approaches aiming at large-area high-power single-mode oxidized VCSELs. Stable and reproducible single-mode emission with SMSR (side-mode suppression ratio) greater than 30dB and output powers well above 5mW are reported for the long monolithic cavity and self-aligned shallow surface etching approaches, both of which are suitable for
Heiko J. Unold +10 more
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We compare various approaches aiming at large-area high-power single-mode oxidized VCSELs. Stable and reproducible single-mode emission with SMSR (side-mode suppression ratio) greater than 30dB and output powers well above 5mW are reported for the long monolithic cavity and self-aligned shallow surface etching approaches, both of which are suitable for
Heiko J. Unold +10 more
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LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080), 2002
InGaAlP-based red-light vertical-cavity surface-emitting lasers (VCSELs) have been successfully fabricated. Excellent temperature characteristics have been realized for 666-nm VCSELs with a proton-implanted planar structure.
G. Hatakoshi, K. Takaoka, M. Ishikawa
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InGaAlP-based red-light vertical-cavity surface-emitting lasers (VCSELs) have been successfully fabricated. Excellent temperature characteristics have been realized for 666-nm VCSELs with a proton-implanted planar structure.
G. Hatakoshi, K. Takaoka, M. Ishikawa
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2006 IEEE LEOS Annual Meeting Conference Proceedings, 2006
We demonstrate metal nano-aperture VCSELs for sub-wavelength optical near-filed probing with strong plasmon enhancement. The plasmonic VCSEL structure is useful for achieving high-resolution optical near-field probes as well as for controlling the polarization of VCSELs.
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We demonstrate metal nano-aperture VCSELs for sub-wavelength optical near-filed probing with strong plasmon enhancement. The plasmonic VCSEL structure is useful for achieving high-resolution optical near-field probes as well as for controlling the polarization of VCSELs.
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2012
This chapter describes the progress in development of vertical-cavity surface-emitting lasers (VCSEL) emitting in the red spectral region around 650 nm for data transmission over polymer optical fibers (POF). First, growth issues of red VCSEL using two different material systems, namely AlGaAs and AlGaInP, are introduced. In particular, the optical and
Michael Jetter +2 more
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This chapter describes the progress in development of vertical-cavity surface-emitting lasers (VCSEL) emitting in the red spectral region around 650 nm for data transmission over polymer optical fibers (POF). First, growth issues of red VCSEL using two different material systems, namely AlGaAs and AlGaInP, are introduced. In particular, the optical and
Michael Jetter +2 more
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Long wavelength VCSEL-by-VCSEL optically injection locked optoelectronic oscillator
SPIE Proceedings, 2015In this article we propose a long wavelength VCSEL by VCSEL Optoelectronic Oscillator to generate high frequency carriers. Stability and quality are key factors to use Vertical-Cavity Surface-Emitting Lasers (VCSELs) in VCSEL Based Optoelectronic Oscillators (VBO). To enhance the performance of a 2.49 GHz VBO presented in [1].
Juan Coronel +2 more
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SPIE Proceedings, 2014
Over the last 20 years, nearly 1 billion VCSELs have been shipped, the vast majority of them emitting at 850nm using GaAs active regions, and primarily used in data communications and optical tracking applications. Looking to the future, the ever increasing speed of data communications is driving the VCSEL to evolve with more complex active regions ...
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Over the last 20 years, nearly 1 billion VCSELs have been shipped, the vast majority of them emitting at 850nm using GaAs active regions, and primarily used in data communications and optical tracking applications. Looking to the future, the ever increasing speed of data communications is driving the VCSEL to evolve with more complex active regions ...
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2012
The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot.
Anders Larsson, Johan S. Gustavsson
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The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot.
Anders Larsson, Johan S. Gustavsson
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