Results 61 to 70 of about 659 (179)

Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

IEEE Photonics Journal, 2020
Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great
Rongbin Xu, Yang Mei, Huan Xu, Tianrui Yang, Leiying Ying, Zhiwei Zheng, Hao Long, Baoping Zhang, Jianping Liu   +8 more
doaj   +1 more source

GaN‐Based Red Resonant Cavity Light‐Emitting Diode up to 673 nm

Electronics Letters, Volume 62, Issue 1, January/December 2026.
GaN‐based red resonant‐cavity light‐emitting diodes were successfully fabricated using two dielectric distributed Bragg reflectors as the top and bottom mirrors.The device exhibited a mode wavelength of up to 673 nm, which is the longest emission wavelength reported to date for GaN‐based microcavity devices.
Wei Ou, Xin Hou, Yang Mei, Baoping Zhang, Daisuke Iida, Kazuhiro Ohkawa   +5 more
wiley   +1 more source

Compact optical pumping system based on offaxis freeform mirror collimation for miniaturized atomic gyroscopes [PDF]

EPJ Web of Conferences
Conventional optical systems for laser beam expansion, collimation, and reflective path configurations in miniaturized atomic gyroscopes face challenges due to excessive volume and component complexity, limiting further optical integration.
Xu Yan, Chai Zhen, Li Jianli
doaj   +1 more source

Stable Propagation of Inhibited Spiking Dynamics in Vertical-Cavity Surface-Emitting Lasers for Neuromorphic Photonic Networks

IEEE Access, 2018
We investigate experimentally and theoretically the communication of inhibited spiking dynamics between two interlinked photonic neurons based upon the vertical-cavity surface-emitting lasers (VCSELs).
Tao Deng, Joshua Robertson, Zheng-Mao Wu, Guang-Qiong Xia, Xiao-Dong Lin, Xi Tang, Zhi-Jing Wang, Antonio Hurtado   +7 more
doaj   +1 more source

Efficient scaling of VCSELs to wavelength dimensions via lithographically defined cavities

JPhys Photonics
The miniaturization of lasers is critical for on-chip optical communication and high-speed data processing beyond the limits of electronics and current high-speed lasers.
Abdulmalik Abdulkadir Madigawa, Muhammad Soroush Sultani Vala, Abdullah Demir   +2 more
doaj   +1 more source

Increasing Single-Mode Power in VCSELs With Antiresonant Oxide Island

IEEE Photonics Journal
This article focuses on increasing the single-mode power in Vertical Cavity Surface Emitting Lasers (VCSELs) through the strategic integration of an antiresonant oxide islands.
Marta Wieckowska, Maciej Dems
doaj   +1 more source

Vertical Cavity Surface Emitting Laser (VCSEL) Market Analysis.

The VCSEL market, valued at USD $1.18 billion in 2020 and projected to reach USD $4.15 billion by 2030 (11.5% CAGR), is driven by its use in high-speed data communication, 3D sensing in consumer electronics, and LiDAR for autonomous vehicles. VCSELs offer superior beam quality, making them key components in data centers and next-generation automotive ...
openaire   +2 more sources

Near-field measurement and four-wave mixing in single-polarization elliptical multimode VCSELs

JPhys Photonics
We investigate the impact of transverse mode coupling caused by four-wave mixing (FWM) in elliptical multimode vertical cavity surface emitting lasers (VCSELs) with polarization control.
Cristina Rimoldi, Marco Novarese, Lorenzo Luigi Columbo, Sebastian Romero García, Christian Raabe, Mariangela Gioannini   +5 more
doaj   +1 more source

Reconfigurable Millimeter-Wave Generation via Mutually Injected Spin-VCSELs

Photonics
We propose a novel scheme for generating high-frequency millimeter-wave signals by exploiting period-one (P1) dynamics in a mutual injection configuration of two spin-polarized vertical-cavity surface-emitting lasers (spin-VCSELs).
Yichuan Xiong, Yu Huang, Pei Zhou, Kuenyao Lau, Nianqiang Li   +4 more
doaj   +1 more source

Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO₂-Buried Structure

IEEE Photonics Journal
In GaN-based vertical-cavity surface-emitting lasers (VCSELs) with insulator-buried structure, the strong index guiding will introduce higher order modes. In this paper, we present a novel GaN-based VCSEL with a tapered SiO2-buried structure by numerical
Rongbin Xu, Yachao Wang, Mingchao Fang, Yang Mei, Leiying Ying, Daquan Yu, Baoping Zhang   +6 more
doaj   +1 more source