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Vertical cavity surface-emitting laser diodes

Annual Meeting Optical Society of America, 1989
We reported all-MBE grown vertical resonator diodes with an active layer made of GaAs bulk and of GaAs/AlGaAs quantum wells. Vertical current injection through two semiconductor mirrors was made possible by a novel reflector structure on the p-side of the diode.
K. Tai   +6 more
openaire   +1 more source

Vertical-cavity surface-emitting laser technology

SPIE Proceedings, 1993
The technology of vertical cavity surface emitting lasers (VCSELs) has grown dramatically in recent years. We have processed and packaged VCSELs, for various applications. The thermal, output coupling, and spectral characteristics for different devices and packages are shown. Practical single device and array packages, and the results of their coupling
Frank H. Peters   +6 more
openaire   +1 more source

Antiguided vertical-cavity surface-emitting lasers

SPIE Proceedings, 2001
Novel single-mode VCSEL designs based on antiguided structures are discussed. Modal characteristics of single-element, 8-12m-dia, ARROW-type VCSELs and two-dimensional phase-locked arrays (4x4 elements) of antiguided VCSELs are studied. ARROW-type VCSELs exhibit low loss for the fundamental mode and strong high-order mode suppression as a result of ...
Luke J. Mawst, Delai Zhou
openaire   +1 more source

Vertical cavity surface emitting laser diodes

SPIE Proceedings, 1990
Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAS/A1GaAS and MOVPE-grown InGaAsPf.EnP material systems with emission wavelengths near 0.87 and 1.3 p.m. respectively. The GaAS/A1GaAS VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with ...
Kuochou Tai   +7 more
openaire   +1 more source

InGaAs vertical-cavity surface-emitting lasers

IEEE Journal of Quantum Electronics, 1991
The authors give theoretical and experimental results for vertical-cavity surface-emitting lasers (VCSELs). The modeling is applied to the design of InGaAs VCSELs. A simple method to calculate the reflectivity of semiconductor stack mirrors with graded interfaces and compound metal/semiconductor stack mirrors is introduced.
R.S. Geels, S.W. Corzine, L.A. Coldren
openaire   +1 more source

Dynamic Characteristics Of Vertical Cavity Surface Emitting Lasers

LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting, 1990
The dynamic behavior of low-threshold vertical-cavity surface-emitting lasers is investigated by using time-resolved spectra for the first time. Significant chirp is observed in the lasing spectrum owing to heating caused by the relatively high operating voltage and resistance.
C. J. Chang-Hasnain   +6 more
openaire   +1 more source

Vertical Cavity Surface Emitting Lasers Photonics

Japanese Journal of Applied Physics, 2006
We overview vertical cavity surface emitting lasers (VCSEL) photonics, that stands for photonics in relation to VCSEL based on the lecture at the 11th Microoptics Conference (MOC'06). We will survey its progress along with the development of VCSELs since 1977.
openaire   +1 more source

Vertical-Cavity Surface-Emitting Lasers

Optics and Lasers in Engineering, 2000
Julian Cheng, Niloy K. Dutta
openaire   +2 more sources

Vertical-External-Cavity Surface-Emitting Lasers

2009
This excerpt gives a succinct explanation of Vertical-External-Cavity Surface-Emitting Lasers.
openaire   +1 more source

Vertical-Cavity Surface-Emitting Laser (VCSEL)

Proceedings of the IEEE, 2013
The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed optical local area networks (LANs) and even wide-area networks (WANs). This device is also enabling ultraparallel data transfer in equipment and computer systems, including storage area networks (SANs) and wide optoelectronics fields. In this paper, we will review
openaire   +1 more source

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