Results 171 to 180 of about 1,030,132 (246)

Solvent‐Desorption‐Induced Formation of a Long‐Period Polymorph Yielding a High‐Performance Porphyrin‐Based Organic Semiconductor

Advanced Science, EarlyView.
Solvent‐desorption‐induced structural transformation of 5,15‐bisphenyl‐tetrabenzoporphyrin generates a long‐period polymorph, in which the π‐stacking direction rotates by 90° between adjacent layers within the crystal while largely retaining crystallographic integrity.
Kazuya Miyazaki, Keitaro Yamamoto, Mitsuaki Yamauchi, Yoshiyuki Mizuhata, Hiroshi Matsuda, Nobutaka Shioya, Takeshi Hasegawa, Hiroko Yamada   +7 more
wiley   +1 more source

Performance Analysis of Dielectric-Modulated C‑Shaped Pocket Dual-Gate Metal-Stacked Oxide-Sandwiched Drain TFET-Based Biosensor. [PDF]

ACS Omega
Rani KA, Nanda U.
europepmc   +1 more source

Ultralow‐Energy Analog Reservoir Computing via Reconfigurable 2‐Transistor Memory

Advanced Science, EarlyView.
This work presents a reconfigurable reservoir‐computing platform based on an oxide InSnZnO two‐transistor cell in which a hold bias selects volatile relaxation for the reservoir or quasi‐non‐volatile multilevel storage for the readout. Multi‐level hold‐bias kernel tune relaxation currents to generate diverse time constants, enriching reservoir states ...
Jeong‐Min Park, Yeong‐In Kim, Jeong Hyun Yoon, Sein Lee, Wooho Ham, Dongyun Lee, Junseo Lee, Dongwook Shin, Kyung Jun Park, Seok Daniel Namgung, Min‐Kyu Song, Jang‐Yeon Kwon   +11 more
wiley   +1 more source

Outcomes of standardized drain-free abdominoplasty after massive weight loss: A retrospective analysis of 2533 post-bariatric patients. [PDF]

JPRAS Open
Borriello C, Barone S, Borriello G, Spagnuolo M, Pilone V, Vitiello A.   +5 more
europepmc   +1 more source

Two‐Dimensional Flash Memory: Materials, Interfaces, and Storage–Computing Convergence

Advanced Science, EarlyView.
We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Zhiyuan Wang, Fanyi Meng, Fanying Meng, Shida Huo, Junxi Xu, Yaohui Wang, Yuexuan Ma, Yuan Xie, Xiaodong Hu, Caofeng Pan, Enxiu Wu   +10 more
wiley   +1 more source

Ultra-sensitive label-free bio-detection via dielectric-modulated GOSC-SOI-TFET. [PDF]

Sci Rep
Kollapudi SNV, Singh MK.
europepmc   +1 more source

Highly Stable and Non‐Volatile Optoelectronic Synapses for Sensing, Memory, and Computing Enabled by a Deep‐Potential Floating Gate

Advanced Science, EarlyView.
A deep‐potential metal floating gate integrates electrical programming, optical partial erasure, and synaptic weight modulation in a MoS2/h‐BN/Au transistor. The device provides a 97.6 V memory window, retention beyond 3000 s, endurance over 1600 cycles, and reproducible operation after 200 days of ambient storage.
Shuo Lei, Shichen Zhang, Zhipeng Zheng, Miao Cai, Shun Tang, Xuguang Guo, Yiming Zhu   +6 more
wiley   +1 more source

Channel-engineered GAA FETs: From device to circuit perspective for Angstrom technology nodes. [PDF]

Sci Rep
Bharath Sreenivasulu V, Thoti N.
europepmc   +1 more source

A ROS‐Responsive and Mucoadhesive Thermosensitive Hydrogel Encapsulated with Mizoribine for Synergistic Dry Eye Therapy

Advanced Science, EarlyView.
The ROS‐responsive in situ thermosensitive MZR@SPPP hydrogel system enables dual‐stage drug loading and sustained ocular delivery. Upon administration, it gelates at ocular surface temperature, enhancing ocular adhesion. By scavenging free radicals, restoring NRF2‐mediated antioxidant defense and mitochondrial homeostasis, and suppressing inflammatory ...
Danyi Qin, Jiani Li, Panqin Ma, Shinan Wu, Wenying Guan, Yimin Huang, Ke Feng, Mingyan Wei, Zixuan Yang, Shujia Guo, Caihong Huang, Yun‐Long Wu, Yi Han, Zuguo Liu   +13 more
wiley   +1 more source

Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors. [PDF]

Materials (Basel)
Alshammari N, Rao MV, Li Q.
europepmc   +1 more source