Results 191 to 200 of about 1,030,132 (246)
A high-frequency silicon-graphene-germanium barristor. [PDF]
Wang X +20 more
europepmc +1 more source
Silicon Nitride Resistive Memories
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner +11 more
wiley +1 more source
Uncertainty-Aware Machine Learning for Compact-Model-Based Design and Identifiability Analysis of WSe<sub>2</sub><i>p</i>-Channel Transistors. [PDF]
He Z, Asare-Yeboah K, Su M, Zhao J.
europepmc +1 more source
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
The electrical characteristics of Nanosheet FET within the quasi-ballistic transport: Role of scattering and temperature variation. [PDF]
Shubham, Pandey RK.
europepmc +1 more source
Solution blending of zwitterionic polymers with PEDOT:PSS provides a simple route to OECT materials with enhanced threshold voltage stability in biologically relevant environments. The polymer sequence alters outer‐domain structure within the preserved PEDOT:PSS framework, thereby tuning charge transport.
Wakana Takahashi +3 more
wiley +1 more source
Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]
Saravanan M +3 more
europepmc +1 more source
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg +7 more
wiley +1 more source
Uniportal midline subxiphoid thymectomy: Our experience from a single oncology centre in India. [PDF]
Kumar N +9 more
europepmc +1 more source

