Results 121 to 130 of about 1,693 (144)

Floating output VMOS amplifier

IEEE Transactions on Circuits and Systems, 1989
A differential input-differential output floating amplifier is described. The essential characteristics of the system are defined by three feature-of-merit parameters. A practical design using VMOS power transistors is also presented and the experimental measured parameters are compared to the theoretical estimates. >
J. Moncassin, M. Rabii, H. Benoit
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Necessary and sufficient condition for a VMO function

Applied Mathematics and Computation, 2012
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Simulation of VMOS power transistors

International Journal of Electronics, 1984
Abstract The paper describes a new model for simulation of the current/voltage characteristics of VMOS power transistors. The model includes the conventional MOS theory modified by mobility reduction, non-uniform concentration distribution in the channel, and the effective resistance of the drain region. Experimental results are discussed. A comparison
Y. K. FANG, C. Y. CHANG, C. H. CHEN, B. D. LIU, S. J. WANG   +4 more
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A new VMOS power FET

1979 International Electron Devices Meeting, 1979
This paper describes the design of a new family of VMOS power FETs exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and a field-plated groove termination to achieve high packing density and high ...
S. Kay, C.T. Trieu, B.H. Yeh
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Geometry effects in VMOS transistors

1978 International Electron Devices Meeting, 1978
Changes in the threshold and channel mobility of VMOS transistors due to device size have been reported. It is also shown that any VMOS transistor can be modeled as a combination of a minimum size device and a typical section of a large device. The influence of the geometry effects on weak inversion characteristics has been described.
I.S. Bhatti, R.Y. Yau
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Fabrication and characterization of a VMOS EPROM

1977 International Electron Devices Meeting, 1977
This paper presents experimental results for the performance of the VMOS EPROM device. The fabrication of the device is presented, followed by data for programmability and data retention. The device programs with lower applied voltages than other EPROM devices, and its projected data retention characteristic predicts a threshold drop of less than 1 ...
D.A. Draper, J.J. Barnes, F.B. Jenne
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VMOS, UMOS technology simulation

28th International Conference on Information Technology Interfaces, 2006., 2006
VMOS, UMOS ("V"-groove-metal-oxide-silicon) transistors drain and gate are formed in the groove of "V" or "U" form. Expanding channel area, therefore VMOS and UMOS structures may use in the power chips. Using VMOS, UMOS is saving 40% free space than using NMOS technology.
T. Kersys, D. Andriukaitis, R. Anilionis
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VMOS ROM

1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1976
T. Rodgers, W. Hiltpold, G. Zimmer, G. Marr, J. Trotter   +4 more
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The characteristic studies of VMOS and UMOS

International Journal of Electronics, 1979
Abstract Under the same process conditions in the conventional diffusion and anisotropic etching technology, short channel MOST with V-shape and U-shape arc fabricated under the same substrate conditions by the standard photolithographical technology.
KUO-LIANG PENG, S.-Y. YU
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On decomposition theorem for BMO and VMO

Complex Variables, Theory and Application: An International Journal, 2000
We show that holds for an arbitrary proper sub-domain D of , where DL(Ddenotes the space of all Lipschitz continuous functions on D with respect to the quasihyperbolic metric.
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