Results 51 to 60 of about 28,458 (264)

Volatilization of Phenyl-2-Naphthylamine from Rubber

open access: yes, 1961
1. The rate of volatilization of phenyl-2-naphthylamine from a rubber slab depends on the flow rate of gas over the slab, the slab thickness, and the initial concentration of the ingredient.
A. I. Zenchenko   +2 more
core   +1 more source

Photoswitching Conduction in Framework Materials

open access: yesAdvanced Functional Materials, Volume 36, Issue 43, 29 May 2026.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez   +4 more
wiley   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

Arsenic volatilization in model anaerobic biogas digesters

open access: yes, 2013
Arsenic is a class 1 non-threshold carcinogen which is highly ubiquitous. Arsenic undergoes many different transformations (biotic or abiotic) between and within environmental compartments, leading to a number of different chemical species possessing ...
Xie, Wan-Ying   +3 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Insight into the functional mechanisms of nitrogen-cycling inhibitors in decreasing yield-scaled ammonia volatilization and nitrous oxide emission: A global meta-analysis

open access: yes, 2023
Soil ammonia (NH3) volatilization and nitrous oxide (N2O) emission decrease nitrogen (N) utilization efficiency and cause some environmental problems. The N-cycling inhibitors are suggested to apply to enhance N utilization efficiency.
Falin Chen   +11 more
core   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Measures to reduce ammonia emissions from livestock manures: now, soon and later

open access: yes, 2011
Various possible options to further decrease ammonia emissions from livestock manure were explored in a desk study. Techniques and their impact on the processes leading to NH3 production and volatilization are described.
Oenema, O.   +3 more
core  

Understanding Trends in Pesticide Volatilization from Agricultural Fields Using the Pesticide Loss via Volatilization Model

open access: yes, 2019
The Pesticide Loss via Volatilization model was developed to predict and understand pesticide volatilization rates from a planted agricultural field. The model allows the user to adjust the properties of the pesticide, various soil and plant descriptors,
Cleo L. Davie-Martin (1541107)   +9 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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