Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics [PDF]
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes.
Georgy Teplov +8 more
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Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel [PDF]
This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes.
Natalia Vetrova +5 more
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A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials [PDF]
The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device ...
Fedor Pavlovich Meshchaninov +5 more
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Breakdown, scaling and volt–ampere characteristics of low current micro-discharges [PDF]
We give preliminary results on the breakdown and low current limit of volt‐ampere characteristics of simple parallel plate non-equilibrium dc discharges at standard (centimetre size) and micro-discharge conditions. Experiments with micro-discharges are reported attempting to establish the maintenance of E/N, pd and j/p 2 scalings at small dimensions ...
Z Lj Petrović +6 more
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Obtaining new types of compounds between silicon and cadmium sulfide [PDF]
The n+CdS-nCdS-nSi+ structures were obtained, and their volt-ampere characteristics at different temperatures were studied. The dependence of the volt-ampere characteristic shows that the sublinear and quadratic section of these structures has a section ...
Sapaev I. B.
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Application of numerical and graphical methods of analysis in nonlinear resistive circuits of electronic devices [PDF]
The article discusses the research issues and methods of analysis of semiconductor circuits used in electronic circuits of contactless switching devices, provides analytical, graphic and numerical methods for the analysis of nonlinear semiconductor ...
Abduraimov Erkin, Nurmatov Baxtiyor
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The properties of metal contacts on TiO2 thin films produced by reactive magnetron sputtering [PDF]
The article deals with research on volt-ampere characteristics of metal contacts (Al, Cr, In, Mo, Ti) on titanium dioxide thin films and influence of annealing in vacuum on their electric properties. Volt-ampere characteristics measurements were taken by
В. В. Брус +4 more
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Volt-ampere characteristics of porcine retinal Müller cell intermediate filaments
Abstract In the current study we reported current-voltage (I/V) characteristics of Muller cell (MC) intermediate filaments (IFs) isolated from porcine retina. It was found that the measured I/V dependences demonstrate behavior of a semiconductor in contact with metal (Au) electrodes.
Vladimir Makarov, Igor Khmelinskii
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WEB APPLICATION FOR HIGH ACCURANCY MEASUREMENT OF VOLT-AMPERE CHARACTERISTICS
Web application is described that allows, by scanning digital images of analog oscillograms of voltage and current pulses, to measure with high accuracy the volt-ampere characteristics of semiconductor materials at high electric currents. The application allows measuring voltage and current with a relative error that does not exceed 1%.
Alexander Ivon +2 more
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The paper contains processing results of digital current and voltage oscillograms as effective, mean and peak volt-ampere characteristics of a serviceable current transformer with short- circuited turns.
V. Kh. Sapyanik +2 more
doaj +1 more source

