Results 1 to 10 of about 77,252 (248)
Effect of Statistical Dopant Fluctuations on Threshold Voltage of Emerging Devices
IEEE Journal of the Electron Devices Society, 2021 This paper presents a comparative study on the effect of statistical dopant fluctuations on threshold voltage ( $V_{th}$ ) of emerging and conventional metal-oxide-semiconductor (MOS) field-effect (FET) transistors (MOSFETs). In this context, three ${n}$
Samar K. Saha
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Micromachines, 2022 This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model.
Donguk Kim +9 more
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Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)
IEEE Access, 2023 The high data throughput and high energy efficiency required recently are increasingly difficult to implement due to the von Neumann bottleneck. As a way to overcome this, Logic-in-Memory (LiM) technology has recently been receiving a lot of attention ...
Sueyeon Kim +6 more
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Heterostructure Ge-Body pTFETs for Analog/RF Applications
IEEE Journal of the Electron Devices Society, 2020 This article presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure p-channel tunnel field-effect transistors (pTFETs) with Ge (Germanium) channel and different compound semiconductor source ...
Sayani Ghosh +3 more
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Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
Applied Sciences, 2021 In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices.
Hyeonjae Won, Myounggon Kang
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IEEE Open Journal of Power Electronics, 2021 This work presents a physics-based compact GaN device model that can predict the performance characteristics of a wide range of GaN devices for power electronics applications.
Ramchandra M. Kotecha +5 more
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Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate
Applied Sciences, 2021 Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics.
Je-Hyuk Kim +9 more
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Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2022 A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection
Christian Roemer +8 more
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Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling
IEEE Journal of the Electron Devices Society, 2022 Memristors were first proposed in 1971 by Leon Chua. These devices are usually regarded as being one of the newest fundamental breakthrough for electronics. Their role in designing new electronic systems is expected to be an important, key-factor.
Rodrigo Picos +4 more
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Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect
IEEE Journal of the Electron Devices Society, 2020 In this article, we present a channel thickness dependent analytical model for MoS2 symmetric double-gate FETs including negative capacitance (NC) effect.
Keshari Nandan +8 more
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