Results 31 to 40 of about 25,106,713 (303)
Compact Representations of Extended Causal Models [PDF]
AbstractJudea Pearl (2000) was the first to propose a definition of actual causation using causal models. A number of authors have suggested that an adequate account of actual causation must appeal not only to causal structure but also to considerations of normality.
Halpern, Joseph Y. +1 more
openaire +4 more sources
Advanced compact modeling of the deep submicron technologies
The technology of CMOS large-scale integrated circuits (LSI`s) achieved remarkable advances over last 25 year and the progress is expected to continue well into the next century.
Władysław Grabiński +3 more
doaj +1 more source
Noise-Based Simulation Technique for Circuit-Variability Analysis
An accurate and efficient noise-based simulation technique for predicting the impact of device-parameter variability on the DC statistical behavior of integrated circuits is presented.
Aristeidis Nikolaou +7 more
doaj +1 more source
Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing
Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for
Salvatore A. Pullano +6 more
doaj +1 more source
Compact Model Representation for 3D Reconstruction [PDF]
9 pages, 6 ...
Jhony Kaesemodel Pontes +5 more
openaire +5 more sources
On the Thermal Models for Resistive Random Access Memory Circuit Simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware ...
Juan B. Roldán +13 more
doaj +1 more source
The Compact Model Synthesis for the RADFET Device
This article proposes a compact model for the radiation-sensitive field-effect transistor (RADFET). The model represents the basic I–V characteristics of the MOSFET device and includes the effects of threshold voltage shift as a function of absorbed dose
Vadim Kuznetsov +4 more
doaj +1 more source
Macro-Modeling for N-Type Feedback Field-Effect Transistor for Circuit Simulation
In this study, we propose an improved macro-model of an N-type feedback field-effect transistor (NFBFET) and compare it with a previous macro-model for circuit simulation. The macro-model of the NFBFET is configured into two parts.
Jong Hyeok Oh, Yun Seop Yu
doaj +1 more source
This paper presents the cryogenic characterization and compact modeling of thin-oxide MOSFETs in a standard 65-nm Si-bulk CMOS technology. The influence of both short and narrow channel effects at extremely low temperature on key device parameters such ...
A. Gatti, Filip Tavernier
semanticscholar +1 more source
We present an approach to estimate damping in highly and irregularly perforated microplates over a wide range of pressures applying physics-based compact models implemented in a flux-conserving finite network.
Friederike Michael +2 more
doaj +1 more source

