Results 21 to 30 of about 25,106,713 (303)
Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)
IEEE Access, 2023 The high data throughput and high energy efficiency required recently are increasingly difficult to implement due to the von Neumann bottleneck. As a way to overcome this, Logic-in-Memory (LiM) technology has recently been receiving a lot of attention ...
Sueyeon Kim +6 more
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IEEE Journal of the Electron Devices Society, 2020 In this article, we focus on the physical modeling of the nonlinear operation of intrinsic photoconductive semiconductor switches (PCSS) based on 4H-SiC using coupled electrical and optical simulations to provide performance bounds of the switch as a ...
S. Rakheja +5 more
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Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
Applied Sciences, 2021 In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices.
Hyeonjae Won, Myounggon Kang
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IEEE Open Journal of Power Electronics, 2021 This work presents a physics-based compact GaN device model that can predict the performance characteristics of a wide range of GaN devices for power electronics applications.
Ramchandra M. Kotecha +5 more
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Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate
Applied Sciences, 2021 Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics.
Je-Hyuk Kim +9 more
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Compact Modeling and Analysis of Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction
IEEE Access, 2020 Recently, experimental results have demonstrated that perpendicular magnetic tunnel junction (p-MTJ) with the antiferromagnetic(AFM)/ferromagnetic (FM)/oxide structure can achieve field-free spin-orbit torque (SOT) switching since the AFM metal strip can
Kaili Zhang +5 more
semanticscholar +1 more source
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2022 A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection
Christian Roemer +8 more
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Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect
IEEE Journal of the Electron Devices Society, 2020 In this article, we present a channel thickness dependent analytical model for MoS2 symmetric double-gate FETs including negative capacitance (NC) effect.
Keshari Nandan +8 more
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Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling
IEEE Journal of the Electron Devices Society, 2022 Memristors were first proposed in 1971 by Leon Chua. These devices are usually regarded as being one of the newest fundamental breakthrough for electronics. Their role in designing new electronic systems is expected to be an important, key-factor.
Rodrigo Picos +4 more
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Graphene‐on‐Silicon Hybrid Field‐Effect Transistors
Advanced Electronic Materials, 2023 The combination of graphene and silicon in hybrid electronic devices has attracted increasing attention over the last decade. Here, a unique technology of graphene‐on‐silicon heterostructures as solution‐gated transistors for bioelectronics applications ...
Mykola Fomin +11 more
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