Results 11 to 20 of about 77,252 (248)

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

open access: yesAdvanced Electronic Materials, 2023
The combination of graphene and silicon in hybrid electronic devices has attracted increasing attention over the last decade. Here, a unique technology of graphene‐on‐silicon heterostructures as solution‐gated transistors for bioelectronics applications ...
Mykola Fomin   +11 more
doaj   +1 more source

Advanced compact modeling of the deep submicron technologies

open access: yesJournal of Telecommunications and Information Technology, 2000
The technology of CMOS large-scale integrated circuits (LSI`s) achieved remarkable advances over last 25 year and the progress is expected to continue well into the next century.
Władysław Grabiński   +3 more
doaj   +1 more source

Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing

open access: yesSensors, 2019
Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for
Salvatore A. Pullano   +6 more
doaj   +1 more source

Research and Development of Parameter Extraction Approaches for Memristor Models

open access: yesMicromachines, 2021
Memristors are among the most promising devices for building neural processors and non-volatile memory. One circuit design stage involves modeling, which includes the option of memristor models.
Dmitry Alexeevich Zhevnenko   +5 more
doaj   +1 more source

A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials

open access: yesMicromachines, 2021
The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device ...
Fedor Pavlovich Meshchaninov   +5 more
doaj   +1 more source

Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics

open access: yesMicromachines, 2022
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes.
Georgy Teplov   +8 more
doaj   +1 more source

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

open access: yesJournal of Low Power Electronics and Applications, 2014
Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low
Marc Bocquet   +9 more
doaj   +1 more source

Compact Representations of Extended Causal Models [PDF]

open access: yesCognitive Science, 2013
AbstractJudea Pearl (2000) was the first to propose a definition of actual causation using causal models. A number of authors have suggested that an adequate account of actual causation must appeal not only to causal structure but also to considerations of normality.
Halpern, Joseph Y.   +1 more
openaire   +6 more sources

Leading-Edge Thin-Layer MOSFET Potential Modeling Toward Short-Channel Effect Suppression and Device Optimization

open access: yesIEEE Journal of the Electron Devices Society, 2019
A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus an enlargement of the insight into SCE suppression in advanced thin-layer MOSFETs is
Fernando Avila Herrera   +7 more
doaj   +1 more source

Compact Model Representation for 3D Reconstruction [PDF]

open access: yes2017 International Conference on 3D Vision (3DV), 2017
9 pages, 6 ...
Jhony Kaesemodel Pontes   +5 more
openaire   +5 more sources

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