Results 11 to 20 of about 25,106,713 (303)
Effect of Statistical Dopant Fluctuations on Threshold Voltage of Emerging Devices
IEEE Journal of the Electron Devices Society, 2021 This paper presents a comparative study on the effect of statistical dopant fluctuations on threshold voltage ( $V_{th}$ ) of emerging and conventional metal-oxide-semiconductor (MOS) field-effect (FET) transistors (MOSFETs). In this context, three ${n}$
Samar K. Saha
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Compact Transformer Tracker with Correlative Masked Modeling [PDF]
AAAI Conference on Artificial Intelligence, 2023 Transformer framework has been showing superior performances in visual object tracking for its great strength in information aggregation across the template and search image with the well-known attention mechanism. Most recent advances focus on exploring
Zikai Song +4 more
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Research and Development of Parameter Extraction Approaches for Memristor Models
Micromachines, 2021 Memristors are among the most promising devices for building neural processors and non-volatile memory. One circuit design stage involves modeling, which includes the option of memristor models.
Dmitry Alexeevich Zhevnenko +5 more
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Micromachines, 2021 The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device ...
Fedor Pavlovich Meshchaninov +5 more
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Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics
Micromachines, 2022 The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes.
Georgy Teplov +8 more
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Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors
Electronics, 2022 In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generation nano-device.
SangMin Woo +5 more
semanticscholar +1 more source
Heterostructure Ge-Body pTFETs for Analog/RF Applications
IEEE Journal of the Electron Devices Society, 2020 This article presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure p-channel tunnel field-effect transistors (pTFETs) with Ge (Germanium) channel and different compound semiconductor source ...
Sayani Ghosh +3 more
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Micromachines, 2022 This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model.
Donguk Kim +9 more
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Journal of Applied Physics, 2021 The relevance of the intrinsic series resistance effect in the context of resistive random access memory (RRAM) compact modeling is investigated. This resistance notably affects the conduction characteristic of resistive switching memories so that it ...
D. Maldonado +8 more
semanticscholar +1 more source
Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021 The dc and ac performance of advanced SiGe:C heterojunction bipolar transistors (HBTs) featuring transit frequency ( $f_{\text {T}}$ ) and maximum oscillation frequency ( $f_{\text {max}}$ ) of 300 and 500 GHz was characterized from 298 K down to 4.3 K ...
Xiaodi Jin +5 more
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