Results 41 to 50 of about 651 (161)
Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au
The results of studies of the current-voltage characteristics of a photodiode heterostructure are presented. Au-nCdS-nSi-pCdTe-Au, in forward and reverse directions.
Sharifa B. Utamuradova +5 more
doaj +1 more source
Experimental Modeling of the Electron Beam Focusing Regimesin the Axially-Symmetric Systems [PDF]
The paper describes the results of the experimental research of the volt-ampere characteristics of the three-electrode electron gun. Such systems are widely used in the electron-ray devices meant for getting visible image on the screen, and in microwave ...
I.V. Barsuk +2 more
doaj
Background. Structures based on semiconductor materials are widely used in nano- and microelectronics devices. One of the promising directions is related to the production and research of transparent conductive films and structures based on them.
E.A. Pecherskaya +5 more
doaj +1 more source
Study on variations in moisture-affected fault characteristics of EMU lightning arrester
In order to study the changes in the fault characteristics of the EMU lightning arresters exposed to moisture, an artificial moisture test platform of lightning arresters was built, on which the lightning arrester can be controlled to reach three states ...
LIU Jian +5 more
doaj
The volt-ampere characteristics of different diodes and zener diodes are obtained experimentally, and they differ significantly from experience to experience. It is unclear how to properly substantiate the reason for such differences. In this regard, a problem arose in developing the theoretical foundations for the production of this type of equipment ...
openaire +1 more source
Volt-Ampere characteristic of "black box" with a negative resistance
This problem was given at Third Experimental Physics Olympiad "The day of the resistor", 31 October 2015, Kumanovo, organized by the Regional Society of Physicists of Strumica, Macedonia and the Sofia Branch of the Union of Physicists in Bulgaria.
Manolev, Stojan G. +3 more
openaire +2 more sources
RESEARCH OF VOLTAMPER CHARACTERISTICS OF SEMICONDUCTOR STRUCTURES AND DEVICES
Background. The object of study is an automated measuring system designed to measure the electrical parameters of semiconductor structures and devices.
E.A. Pecherskaya +5 more
doaj +1 more source
Investigation of Volt-Ampere Characteristics of a Gas Sensitive Sensor Based on Tin Dioxide
The volt-ampere characteristics of the sensitive elements of gas sensors are investigated and plotted in coordinates corresponding to various mechanisms of the transfer current. It has been established that the prevailing mechanism of current transfer in
Sirajidin Z. Zainabidinov +4 more
doaj +1 more source
RADIATION RESISTANCE SIMULATION OF LOGICAL CMOS INTEGRATED CIRCUITS ELEMENTS
The software to simulate radiation resistance of MOSFET transistors, the basic elements of CMOS integrated circuits, is presented. The software performs visualization and analysis of volt-ampere characteristics of p - and n -channel transistors ...
A. P. Lazar, F. P. Korshunov
doaj
Measuring. Monitoring. Management. Control
Background. Currently, semiconductor structures and devices are used in many industries, in particular electronics, telecommunications, and instrumentation.
E.A. Pecherskaya +4 more
doaj +1 more source

