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Diode detector with voltage gain
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2013We propose a detector with the properties of a diode detector and with additional voltage gain within the same circuit. Thereto, the principle of the diode detector is implemented by an active control loop. By calculations, it is proven that the behavior is similar to the conventional diode detector.
Robert Wolf, Frank Ellinger
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High-voltage high input impedance unity-gain voltage buffer
Microelectronics Journal, 2013Abstract The paper presents a novel structure of a voltage buffer intended for application in high-voltage integrated systems. The presented solution is based on both source-input and gate-input voltage buffer, so as to get the best of both structures.
Mariusz Jankowski, Andrzej Napieralski
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On the Voltage Gain of Complementary Graphene Voltage Amplifiers With Optimized Doping
IEEE Electron Device Letters, 2012An electrostatic doping approach has been implemented in graphene voltage amplifiers operating in a complementary configuration. The employed controllable electrostatic doping enables the operation of both pFET and nFET at the maximum transconductance point for an optimized voltage gain.
Hong-Yan Chen, Joerg Appenzeller
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Marx‐based pulse generator with high‐voltage gain
International Journal of Circuit Theory and Applications, 2021AbstractIn this paper, a new configuration of Marx generator with high‐voltage (HV) gain is presented for electroporation applications. Each module consists of one switch, one capacitor, and two diodes. The capacitors are charged in parallel with the input inductor and the input DC voltage source simultaneously; eventually, the charged capacitors are ...
Ali Kholgh Khiz, Mohamad Reza Banaei
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A Gain-Enhancing Technique for Very Low-Voltage Amplifiers
2008 IEEE International Symposium on Circuits and Systems, 2008In this paper we present a gain enhancement technique for very low-voltage deep sub-micron amplifiers based on the use of a CCH-based negative impedance converter. Relaxed specifications on the current conveyor allow an easy implementation of this technique in a sub-1 V environment, where common topologies such as the cascode and the differential pair ...
CENTURELLI, Francesco +3 more
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Voltage gain enhancement of KY converter
2013 IEEE International Conference of IEEE Region 10 (TENCON 2013), 2013In this paper, an improved KY converter is presented, which is constructed mainly by one charge pump capacitor and one central-tapped coupling inductor. Besides, a passive clamping snubber is added to this converter to improve the efficiency above half load.
K. I. Hwu, W. Z. Jiang, H. M. Chen
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2T1D memory cell with voltage gain
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525), 2004A 2T1D dynamic memory cell with two transistors (T) and a gated diode (D) is presented. The gated diode acts as a nonlinear capacitance which amplifies the internal stored voltage in a read operation, leading to high performance, higher S/N ratio, and low voltage operation.
W.K. Luk, R.H. Dennard
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Voltage gain in the single-electron transistor
Applied Physics Letters, 1992We report the first observation of voltage gain in the capacitively coupled single-electron transistor (SET). Using parallel-plate and interdigital geometries for the gate capacitor (Cg=1.2 and 0.4 fF) and ultrasmall tunnel junctions with capacitances near 0.2 fF, we find maximum voltage gains of 2.8 and 1.5, respectively. The leakage resistance of the
G. Zimmerli +2 more
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Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer
IEICE Transactions on Electronics, 2006The feasibility of a new transistor structure was demonstrated through an experimental observation of current gain and voltage gain. The proposed transistor structure is a hot electron transistor without a base layer to minimize scattering. Electron emission from the emitter is controlled using positively biased Schottky gate electrodes located on both
Y. Miyamoto +5 more
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Implementation of a Modified High-Voltage Unity-Gain Buffer
2021 28th International Conference on Mixed Design of Integrated Circuits and System, 2021This paper presents modification of a specialized high-voltage unity-gain buffer related to its physical implementation in a selected high-voltage SOI technology process. Several additional safety devices are required for non- destructive power-up, normal operation and power-down phases of this buffer function cycle.
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