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Stress induced leakage current under pulsed voltage stress

Solid-State Electronics, 2002
Abstract Stress induced leakage current (SILC) is one of the main problems in ultra-thin oxide MOS devices before the onset of soft or hard breakdown. This paper addresses the problem of SILC produced by dynamic stress. We have studied the behaviour of ultra-thin oxides subjected to pulsed voltage stress (PVS) and the results have been compared with ...
CESTER, ANDREA   +2 more
openaire   +2 more sources

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