Results 251 to 260 of about 565,077 (289)
Some of the next articles are maybe not open access.
Stress induced leakage current under pulsed voltage stress
Solid-State Electronics, 2002Abstract Stress induced leakage current (SILC) is one of the main problems in ultra-thin oxide MOS devices before the onset of soft or hard breakdown. This paper addresses the problem of SILC produced by dynamic stress. We have studied the behaviour of ultra-thin oxides subjected to pulsed voltage stress (PVS) and the results have been compared with ...
CESTER, ANDREA +2 more
openaire +2 more sources
2014 IEEE International Reliability Physics Symposium, 2014
Bias temperature instability (BTI) is the primary reliability mechanism limiting further thinning of the dielectric with future CMOS scaling [1]. This has led to an increased emphasis on quick screening of different processes using Ramp Voltage Stress (RVS) [2], while Constant Voltage Stress (CVS) is typically utilized for more in depth modeling and ...
Barry P. Linder, Takashi Ando
openaire +1 more source
Bias temperature instability (BTI) is the primary reliability mechanism limiting further thinning of the dielectric with future CMOS scaling [1]. This has led to an increased emphasis on quick screening of different processes using Ramp Voltage Stress (RVS) [2], while Constant Voltage Stress (CVS) is typically utilized for more in depth modeling and ...
Barry P. Linder, Takashi Ando
openaire +1 more source
Distribution-transformer voltage stresses
Electrical Engineering, 1949INFREQUENT REPORTS of severe mechanical damage to small transformers as a result of nearby lightning strokes have led to the conclusion that the cause of the damage was the passage of heavy lightning currents in opposing directions in the two halves of the low-voltage windings.
K. D. Beardsley +2 more
openaire +1 more source
2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515), 2002
In this study experiments such as constant voltage, constant current, ramp voltage have been done on gate oxide with 20 nm thickness. IV characteristics and CV characteristics after stress have been studied to investigate the gate oxide degradation mechanism. Our experimental results are different from those reported before.
null Hongwei Luo +3 more
openaire +1 more source
In this study experiments such as constant voltage, constant current, ramp voltage have been done on gate oxide with 20 nm thickness. IV characteristics and CV characteristics after stress have been studied to investigate the gate oxide degradation mechanism. Our experimental results are different from those reported before.
null Hongwei Luo +3 more
openaire +1 more source
High voltage test circuit for harmonic and impulse voltage stress
2015 16th International Scientific Conference on Electric Power Engineering (EPE), 2015The paper deals with testing possibilities of discharge activity influence to a medium voltage cable system. It was observed that the discharge activity in insulation systems of high voltage devices is higher when the power electronic is present. The aim is to create a test circuit which will simulate the influence of superposed impulses and harmonics ...
Martin Knenicky, Radek Prochazka
openaire +1 more source
Voltage stresses in reactors in service
Journal of the American Institute of Electrical Engineers, 1920THE authors have presented experimental data together with a physical explanation of the phenomena revealed. They have endeavored as far as possible to abstain from mathematics and obstruse theoretical considerations.
F. H. Kierstead, Royal Meeker
openaire +1 more source
Considering voltage stress in preventive islanding
2013 IEEE Grenoble Conference, 2013Wide area blackouts are an ever present concern in modern power systems as seen by recent events across the world, including India in 2012. Islanding a power system has the ability to isolate certain parts of a network that are identified as having a risk of instability and prevent the problems cascading. In large interconnected power systems, there is
Sean Norris, Hongbo Shao, Janusz Bialek
openaire +1 more source
EPR lifetime under impulsive voltage stress
CEIDP '05. 2005 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 2005., 2005Accelerated lifetime tests on EPR specimens were performed with the aim to investigate the endurance under impulsive electric stress at room and 90 /spl deg/C temperature. The results outline that relationship of the electric field on the number of applied pulses, at 63% of probability of breakdown, can be described by the well-known inverse power ...
MAZZETTI DI PIETRALATA, Carlo +3 more
openaire +2 more sources
Investigation of voltage stresses inside Adjustable Speed Drives
2011 IEEE Energy Conversion Congress and Exposition, 2011This paper investigates the effect of voltage stress on the voltage insulation components inside a regenerative active-front-end adjustable speed drive (ASD). It shows that a high potential voltage insulation issue may exist on various components inside the ASD and cause earlier failures.
Lixiang Wei +2 more
openaire +1 more source
Predicting voltage stress effects on MV/LV components
2003 IEEE Bologna Power Tech Conference Proceedings,, 2004The problem of predicting voltage stress effects on MV/LV components is discussed. Reference is made to the measurement techniques of the voltage peak, which is the main cause of aging of solid type insulation, in terms of input data, aggregation intervals, observation period and statistical treatment.
GALLO, Daniele +2 more
openaire +2 more sources