Results 121 to 130 of about 6,665,226 (290)

The PSI/PHI architecture for prosodic parsing

, 1988
Gibbon D, Braun G. The PSI/PHI architecture for prosodic parsing. In: Proceedings of the 12th International Conference on Computational Linguistics, {COLING} '88, Budapest, Hungary, August 22-27, 1988.
Braun, Gunter, Gibbon, Dafydd ; https://orcid.org/   +1 more
core  

von Neumann Morgenstern Preferences

, 2000
 von Neumann Morgenstern utility is generalized to von Neumann Morgenstern preferences.
Karl Vind, Vind, Karl
core   +1 more source

Trap‐Programmable Ruddlesden–Popper Perovskite Nanocrystals for Persistent Optoelectronic Memory and Photonic Synapses

Advanced Science, EarlyView.
This work presents trap‐programmable Ruddlesden–Popper perovskite nanocrystals for ultralong‐lived optical memory and photonic synapses. Layer‐controlled octahedral distortion modulates trap depth and carrier‐storage kinetics, enabling persistent luminescence beyond 5000 s at room temperature.
Xuanyu Zhu, Qi Liu, Qi Wei, Hui Ren, Luwei Zhou, Jiangbo Peng, Yuxuan Chen, Jiatong Wang, Leyi Zhao, Pengzhi Wang, Xue Hao, Ting Wang, Mingjie Li   +12 more
wiley   +1 more source

Multi-level probabilistic computing: application to the multiway number partitioning problems

Scientific Reports
Probabilistic computing, a class of physics-based computing, bridges the gap between quantum computing and the classical von Neumann architecture. This approach provides more efficient means of addressing NP problems, which are challenging for classical ...
Ki Hyuk Han, Gyuyoung Park, Jeong Ung Ahn, YongJin Kim, Deok Hyun Yun, Seung-Hun Jang, Young-Jun Nah, Min-Gu Kang, Hyun Cheol Koo, OukJae Lee   +9 more
doaj   +1 more source

The Weyl–von Neumann theorem in von Neumann factors

, 2017
In a von Neumann ...
Krzysztof Kamiński
core   +1 more source

Hardware Acceleration of Stochastic Neural Networks Enabled by Bit‐Cell Level Co‐Design of Magnetic Tunnel Junctions

Advanced Science, EarlyView.
An MTJ‐based probabilistic processing‐in‐memory architecture unites nonvolatile storage, local entropy generation, and stochastic computation within each memory cell. Stored multi‐bit weights are converted directly into programmable stochastic bitstreams, enabling neural‐network inference, adaptive Ising optimization, and uncertainty‐aware Bayesian ...
Qiuyuan Wang, Dooyong Koh, Brooke McGoldrick, Tudor Mocioi, Yabin Fan, Marc Baldo, Luqiao Liu   +6 more
wiley   +1 more source

Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors

Advanced Science, EarlyView.
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer, Juan P. Martinez, Yuxuan He, Giulio Galderisi, Katrin Pingen, Eduardo Sergio Oliveros‐Mata, Lisa Tellis, Cigdem Cakirlar, Christoph Beyer, Brojogopal Sapui, Joachim Knoch, Klaus Hofmann, Sandro Carrara, Eugenio Cantatore, Max C. Lemme, Ian O'Connor, Akash Kumar, Andre Heinzig, Thomas Mikolajick, Walter M. Weber   +19 more
wiley   +1 more source

Effective Protein Interactions in a Coarse-Grained Model for Lipid Membranes

, 2008
West B, Schmid F. Effective Protein Interactions in a Coarse-Grained Model for Lipid Membranes. In: Münster G, Wolf D, Kremer M, John-von-Neumann-Institut für Computing, eds. NIC Symposium 2008. NIC Series. Vol 39.
Münster, G., Schmid, Friederike, Wolf, D., West, Beate, John-von-Neumann-Institut für Computing, Kremer, M.   +5 more
core  

Lattice Disorder in CuI Enables Filament‐Free Transparent Memristors

Advanced Science, EarlyView.
Transparent Cu1‐xAgxI thin‐film memristors rely on internal ion transport to produce reversible resistive‐switching effects. Direct elemental characterizations observe obvious Cu and Ag redistribution driven by applied bias, proving mobile ions drive the device's resistive‐switching responses.
Yuzhao Ouyang, Ke Qu, Haonan Wang, Jianquan Liu, Wei Li, Zhuoran Ji, Jialin Yang, Qiuxiang Zhu, Zhenzhong Yang, Xiaodong Tang, Hui Peng, Bobo Tian, Chungang Duan, Chang Yang   +13 more
wiley   +1 more source

Polarity‐Controlled Coexistence of Electrochemical Metallization and Valence Change Mechanisms in a Unified Metal Halide Perovskite Memristor

Advanced Science, EarlyView.
Electrochemical metallization and valence change mechanisms are shown to coexist within a single metal halide perovskite memristor, selectively activated by simply reversing the electroforming voltage polarity. Ag‐driven switching delivers low operating voltages and high endurance, while intrinsic ion migration yields superior retention and resistance ...
Ismael Fernandez‐Guillen, Omar E. Solis, Pablo F. Betancur, Rafael Abargues, Pablo P. Boix   +4 more
wiley   +1 more source