Results 51 to 60 of about 2,654 (260)

Scalable 2T2R Logic Computation Structure: Design From Digital Logic Circuits to 3-D Stacked Memory Arrays

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
In the post Moore era, post-complementary metal–oxide–semiconductor (CMOS) technologies have received intense interests for possible future digital logic applications beyond the CMOS scaling limits.
Zongxian Yang, Kangqiang Pan, Norman Y. Zhou, Lan Wei   +3 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Two New Types of Rings Constructed from Quasiprime Ideals

International Journal of Mathematics and Mathematical Sciences, 2011
Keigher showed that quasi-prime ideals in differential commutative rings are analogues of prime ideals in commutative rings. In that direction, he introduced and studied new types of differential rings using quasi-prime ideals of a differential ring.
Manal Ghanem, Hassan Al-Ezeh
doaj   +1 more source

A characterization of von Neumann regular rings and applications

Linear Algebra and its Applications, 2010
For an \(n\times m\) matrix \(A=(a_{ij})\) and an \(m\times l\) matrix \(B=(b_{ij})\) over the same ring \(R\), we say that the pair of matrices \((A,B)\) has simple 0-multiplication if \(a_{ik}b_{kj}=0\) for all \(1\leq i\leq n\), \(1\leq k\leq m\) and \(1\leq j\leq l\).
Lee, Tsiu-Kwen, Zhou, Yiqiang
openaire   +3 more sources

Topology and Material Optimization in Ultra‐Soft Magneto‐Active Structures: Making Advantage of Residual Anisotropies

Advanced Materials, EarlyView.
Residual magnetization induces pronounced mechanical anisotropy in ultra‐soft magnetorheological elastomers, shaping deformation and actuation even without external magnetic fields. This study introduces a computational‐experimental framework integrating magneto‐mechanical coupling into topology optimization for designing soft magnetic actuators with ...
Carlos Perez‐Garcia, Rogelio Ortigosa, Jesús Martínez‐Frutos, Daniel Garcia‐Gonzalez   +3 more
wiley   +1 more source

Charge‐Encoded Sidechains Enable Deterministic Ion Ingress and Memory Retention in Organic Electrochemical Synaptic Transistors

Advanced Materials, EarlyView.
Organic electrochemical synaptic transistors based on sidechain‐engineered conjugated polyelectrolytes reveal that cationic sidechains enable efficient volumetric ion penetration and dense backbone doping, leading to enhanced transconductance and long‐term synaptic retention.
Haim Kwon, Jihyeon You, Chaeyeon Park, Dong Gue Roe, Ji Hyun Jung, Jeong Ho Cho, Han Young Woo   +6 more
wiley   +1 more source

Metal Oxide Nano‐Interface Boosting the Deep Ultraviolet Adjustable Noise‐Filtering In‐Sensor Computing

Advanced Materials, EarlyView.
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju, Peng Li, Jingsong Yuan, Boyuan Yu, Bin Han, Yusheng Chen, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì   +9 more
wiley   +1 more source

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

Advanced Materials Technologies, EarlyView.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

Synergistic Spin‐Polarization and Single‐Atom Engineering in Magnetic Heterojunctions for Efficient Solar Water Splitting

Advanced Science, EarlyView.
High‐throughput screening led to the identification of 67 Z‐scheme heterojunctions (comprising 2D magnetic transition metal halides and non‐magnetic transition metal chalcogenides). For CrI3/MoTe2 and CrI3/WTe2, electronic structure analysis demonstrated that synergistic crystallographic point group and built‐in electric field effects generate a ...
Hongyang Ren, Zhenzhou Guo, Huirong Wu, Peilin Huang, Jie Yang, Jie Zhang, Guangqian Ding, Hongkuan Yuan, Biao Wang   +8 more
wiley   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source