Results 71 to 80 of about 2,654 (260)

Dual‐Mode Nanoporous SiO2 Memristors with Coexisting Volatile and Nonvolatile Dynamics for Reservoir Computing

open access: yesAdvanced Science, EarlyView.
A nanoporous SiO2 memristor enabling reconfigurable volatile and non‐volatile switching within a single device is demonstrated. The dual‐mode functionality supports both physical reservoir dynamics and synaptic weight storage, allowing unified hardware implementation of reservoir computing for temporal information processing, including image and ...
Bohao Ding   +5 more
wiley   +1 more source

Modeling polycrystals with regular polyhedra

open access: yesMaterials Research, 2006
Polycrystalline structure is of paramount importance to materials science and engineering. It provides an important example of a space-filling irregular network structure that also occurs in foams as well as in certain biological tissues.
Paulo Rangel Rios, Martin Eden Glicksman
doaj   +1 more source

Semisimplicity and von Neumann's regularity

open access: yesSemigroup Forum, 1971
The purpose of this paper is to link semigroup theory and category theory by using Green's relations to study regular morphisms and semisimple objects in a category which is filtering in the sense that every morphism admits an epic-monic factorization. For example, the following results are shown for a filtering category C ∶ (1)C is regular if and only
openaire   +2 more sources

Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration

open access: yesAdvanced Science, EarlyView.
This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang   +6 more
wiley   +1 more source

K 1 of a Commutative von Neumann Regular Ring [PDF]

open access: yesProceedings of the American Mathematical Society, 1972
Let A be a commutative regular ring (in the sense of von Neumann), and let q be an ideal in A . Then
openaire   +1 more source

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

open access: yesAdvanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee   +5 more
wiley   +1 more source

Investigation of Flow Control for the Hypersonic Inlets via Counter Flow

open access: yesInternational Journal of Aerospace Engineering, 2015
Experimental results show that there exist two flow fields in the hypersonic inlets when the forebody waves interact with the lip boundary, which is similar to the shock reflection ion hysteresis phenomenon.
Xiaoqiang Fan, Yuan Tao
doaj   +1 more source

The ring of polynomial over a von Neumann regular ring [PDF]

open access: yesProceedings of the American Mathematical Society, 1973
It is shown that the ring of polynomials in one indeterminate over a commutative von Neumann regular ring with identity element is semihereditary.
openaire   +1 more source

Hierarchical Multi‐Mode Computing in Interlayer‐Coupled 3D RRAM Crossbar Arrays

open access: yesAdvanced Science, EarlyView.
2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Seungman Park   +7 more
wiley   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

open access: yesAdvanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon   +13 more
wiley   +1 more source

Home - About - Disclaimer - Privacy