Results 241 to 250 of about 1,024,017 (312)

In Situ Electrochemical Activation of Pseudo‐Layered NbS3 via Interlayer Expansion and Dual Redox for High Mg‐Ion Storage

open access: yesAdvanced Science, EarlyView.
A quasi‐1D pseudo‐layered NbS3 cathode for magnesium‐ion batteries can be created through electrochemically induced interlayer expansion. The widened ion‐transport channels enable fast magnesium ion diffusion and unlock coupled cationic‐anionic redox chemistry.
Pengcheng Jing   +6 more
wiley   +1 more source

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis   +13 more
wiley   +1 more source

A Polymorphic Reconfigurable Multi‐Electrode Device Based on Electrically Bistable Nanostructured Metallic Films

open access: yesAdvanced Electronic Materials, EarlyView.
A polymorphic reconfigurable multi‐electrode device based on electrically bistable nanostructured metallic films. The adaptive reconfiguration properties of the nanostructured network under specific input voltages drive the reprogrammability of the device. This system can be employed for the implementation of polymorphic devices, which can be used both
Silvia Bressan   +4 more
wiley   +1 more source

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko   +3 more
wiley   +1 more source

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