Results 191 to 200 of about 15,421 (269)

Epitaxial Integration of III–V Membrane Photodetectors With Lateral p–i–n Junctions on the Silicon‐On‐Insulator Waveguide Platform

open access: yesLaser &Photonics Reviews, EarlyView.
Epitaxial growth forms III–V membranes directly atop the silicon waveguide layer on SOI, while in‐plane in situ doping defines lateral p–i–n InP/InGaAs junctions in a single growth step. The membrane photodetectors achieve 50 Gb/s NRZ‐OOK operation.
Zhao Yan   +10 more
wiley   +1 more source

Canalized polaritons as virtual waveguides for nanoscale emitters

open access: yes
Voronin K   +9 more
europepmc   +1 more source

Waveguide design for a TFLN platform at 1064 nm for applications in spacecom and spectroscopy. [PDF]

open access: yesSci Rep
Kincaid PS   +5 more
europepmc   +1 more source

Quantum refrigeration powered by noise in a superconducting circuit. [PDF]

open access: yesNat Commun
Sundelin S   +4 more
europepmc   +1 more source

Photonic non-Abelian topological insulators with six bands. [PDF]

open access: yesNat Commun
Jiang T   +9 more
europepmc   +1 more source
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The waveguide invariant for a Pekeris waveguide

The Journal of the Acoustical Society of America, 2021
A closed-form waveguide invariant β for a Pekeris waveguide is derived. It is based on the modal Wentzel-Kramers-Brillouin (WKB) dispersion equation and implicit differentiation, in conjunction with the concept of the “effective boundary depth,” ΔH(θ), where θ is the propagation angle.
Gihoon, Byun, H C, Song
openaire   +2 more sources

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