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Epitaxial growth forms III–V membranes directly atop the silicon waveguide layer on SOI, while in‐plane in situ doping defines lateral p–i–n InP/InGaAs junctions in a single growth step. The membrane photodetectors achieve 50 Gb/s NRZ‐OOK operation.
Zhao Yan +10 more
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Canalized polaritons as virtual waveguides for nanoscale emitters
Voronin K +9 more
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Oscillatory Dynamics and Energy Transport in Twisted Magnetic Flux Tubes of the Solar Photosphere. [PDF]
Alanezy AS +4 more
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Waveguide design for a TFLN platform at 1064 nm for applications in spacecom and spectroscopy. [PDF]
Kincaid PS +5 more
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Quantum feedback-enhanced discord in T-shaped plasmonic waveguides with embedded cavity. [PDF]
Sadeghi H, Mirzaee M, Zarei R.
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Quantum refrigeration powered by noise in a superconducting circuit. [PDF]
Sundelin S +4 more
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Hadamard gate realization based on quantum Fourier transform for the creation of quantum numbers in the integrated optical domain. [PDF]
Armaghani S, Rostami A.
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Photonic non-Abelian topological insulators with six bands. [PDF]
Jiang T +9 more
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The waveguide invariant for a Pekeris waveguide
The Journal of the Acoustical Society of America, 2021A closed-form waveguide invariant β for a Pekeris waveguide is derived. It is based on the modal Wentzel-Kramers-Brillouin (WKB) dispersion equation and implicit differentiation, in conjunction with the concept of the “effective boundary depth,” ΔH(θ), where θ is the propagation angle.
Gihoon, Byun, H C, Song
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