Results 101 to 110 of about 16,351 (259)

Sub-10 μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates via a Wet Etching Method. [PDF]

ACS Omega, 2023
Wang L, Zhu Y, Wen RT, Xia G.
europepmc   +1 more source

Rational Tuning of Hygroscopic Oscillation of Stacked Nanoflake Assemblies for Continuous Ambient Energy Harvesting

Advanced Materials, EarlyView.
Stacked nanoflake assembly (SNA) membranes can oscillate autonomously, offering opportunities for soft actuation and energy harvesting. This work uncovers the physical mechanism behind the sustained oscillation of SNA membranes in gradient humidity and identifies three governing dimensionless parameters, enabling rational design for optimizing SNA ...
Zijing Zhang, Jimin Fu, Gesa Zhang, Zhihua Liang, Boxun Zhang, Haimin Yao   +5 more
wiley   +1 more source

Neural network-driven molecular insights into alkaline wet etching of GaN: toward atomistic precision in nanostructure fabrication

npj Computational Materials
We present large-scale molecular dynamics (MD) simulations based on a neural network potential (NNP) to investigate alkaline wet etching of GaN, a process critical to nitride-based semiconductor fabrication.
Purun-hanul Kim, Jeong Min Choi, Seungwu Han, Youngho Kang   +3 more
doaj   +1 more source

Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors. [PDF]

Micromachines (Basel), 2023
Zhang X, Cho SW.
europepmc   +1 more source

A Geometrically Transient Platform for Bioelectronic Implants

Advanced Materials, EarlyView.
Minimally invasive bioelectronic implants often compromise performance for smaller sizes. To resolve this optimization dilemma, a wireless bioelectronic implant with a transient geometry is introduced (MiFi). The origami‐inspired device miniaturizes up to sixfold for syringe insertion and autonomously unfolds post‐implantation.
Selin Olenik, John D. Goodwin, Atharv Naik, Philip Coatsworth, Ioi Chit Cheung, Farbod Amirghasemi, Anies Sohi, Ehsan Abedi, Tayeb Tadlaoui, Maral P. S. Mousavi, Andriy S. Kozlov, Victoria Salem, Andrew S. Cowburn, Firat Guder   +13 more
wiley   +1 more source

Patterning of graphene using wet etching with hypochlorite and UV light. [PDF]

Sci Rep, 2022
Zhang M, Yang M, Okigawa Y, Yamada T, Nakajima H, Iizumi Y, Okazaki T.   +6 more
europepmc   +1 more source

Bioinspired Adaptive Surfaces for Intelligent Liquid Manipulation: Progressing From Passive and Active to Hybrid Strategies

Advanced Materials, EarlyView.
This review examines passive, active, and hybrid liquid manipulation strategies, highlighting hybrid approaches as an emerging route to reconcile energy efficiency with adaptive control. By actively reconstructing passive surfaces to store programmable interfacial energy, hybrid systems enable flexible yet low‐power liquid transport, with perspectives ...
Jiaqi Miao, Yiyuan Zhang, Liqiu Wang, Alan C. H. Tsang   +3 more
wiley   +1 more source

Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid. [PDF]

Materials (Basel), 2022
Wan Y, Luan X, Zhou L, Wu F.
europepmc   +1 more source

Establishing Atomic Coherence in Twisted Oxide Membranes Containing Volatile Elements

Advanced Materials, EarlyView.
Twisted oxide membranes containing volatile elements often suffer from amorphous interfacial dead layers that suppress coupling. An oxygen‐annealing strategy establishes atomically coherent and chemically bonded interfaces in twisted NaNbO3 membranes, enabling coherent oxide moiré architectures in volatile‐element‐containing systems.
Young‐Hoon Kim, Reza Ghanbari, Min‐Hyoung Jung, Yang Zhang, Young‐Min Kim, Ruijuan Xu, Miaofang Chi   +6 more
wiley   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source