Results 101 to 110 of about 80,250 (296)

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

Advanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

Characterization of platinum lift-off technique [PDF]

, 2000
In micro electromechanical systems (MEMS) and micro electronic devices there has been a strong demand for the fabrication of electrodes. Platinum (Pt) is a good candidate for this, because it combines some attractive properties: low electrical resistance,
Berenschot, J.W., Elwenspoek, M.C., Krijnen, G.J.M., Tong, H.D., Wiegerink, R.J., Zwijze, R.A.F.   +5 more
core   +1 more source

Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM

, 2012
Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470--650C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber have been investigated.
K. V. Chizh, Kern W., L. A. Krylova, L. V. Arapkina, O. V. Uvarov, V. A. Chapnin, V. A. Yuryev   +6 more
core   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong, Juan Anthony Prayogo, Soobin Heo, Jae Sung Yun, Dong Ryeol Whang, Dong Wook Chang, Hui Joon Park   +6 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials

Nanomaterials
The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and ...
Kinga Majkowycz, Krzysztof Murawski, Małgorzata Kopytko, Krzesimir Nowakowski-Szkudlarek, Marta Witkowska-Baran, Piotr Martyniuk   +5 more
doaj   +1 more source

Revealing the Hidden Role of Cd in p‐Type Mg3Sb2: Enhanced Thermoelectric Performance by Grain Boundary Segregation Engineering

Advanced Functional Materials, EarlyView.
The hidden role of Cd segregation at grain boundaries is revealed in p‐type Mg3Sb2 by atom probe tomography and other advanced characterizations. Grain boundary Cd enrichment suppresses the SbMg+ hole‐killer formation and lowers potential barriers, enhancing electrical conductivity.
Zhou Li, Deming Dong, Xiaoyu Yang, Jun Qian, Mengruizhe Kong, Han Wan, Ni Ma, Wei Bai, Pengfei Nan, Binghui Ge, Jiming Song, G. Jeffrey Snyder, Yuan Yu   +12 more
wiley   +1 more source

Photoluminescence and photoluminescence excitation studies of lateral size effects in Zn_{1-x}Mn_xSe/ZnSe quantum disc samples of different radii

, 1998
Quantum disc structures (with diameters of 200 nm and 100 nm) were prepared from a Zn_{0.72}Mn_{0.28}Se/ZnSe single quantum well structure by electron beam lithography followed by an etching procedure which combined dry and wet etching techniques.
C. Gourgon, D. Wolverson, G. Bacher, H. Mayer, J. Griesche, J. J. Davies, L. S. Dang, M. A. Foad, M. Happ, M. Illing, P. J. Klar, P. J. Klar, P. J. Klar, R. Steffen, T. Henning, W. Heimbrodt, Y. M. Niquet, Z. H. Yu   +17 more
core   +1 more source

WET ETCHING OF OPTICAL THIN FILMS

, 2010
Evaluation of the wet etching properties of several different thin film oxidesgrown by physical vapour deposition was performed in this work. MgO, Al2O3,SiO2, TiO2, HfO2 ZrO2 and Y2O3 were coated on two types of substrates; Si andborosilicate glass and etching tests were performed in different etchingsolutions. MgF2 thin films have also been evaluated.
openaire   +2 more sources