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Direct Determination of Band Gap of Defects in a Wide Band Gap Semiconductor
ACS Applied Materials & Interfaces, 2022Crystal defects play an important role in the degradation and failure of semiconductor materials and devices. Direct determination of band gap of defects is a critical step for clarifying how the defects affect the physical properties of semiconductors.
Xuexi Yan +9 more
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Wide-Band-Gap Semiconductor Scintillators
2020Conductive semiconductor radiation detectors are successfully used in many applications. This chapter is focused on exploitation of semiconductors, especially wide-band-gap semiconductors, as scintillators. The semiconductor scintillators are prospective for fast radiation detectors.
Mikhail Korzhik +2 more
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Wide Band Gap power semiconductor devices
2013 Spanish Conference on Electron Devices, 2013It is worldwide accepted that a real breakthrough in Power Electronics mainly comes Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature.
Jose Millan, Philippe Godignon
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Catalysis on Wide-Band-Gap Semiconductors
The Journal of Chemical Physics, 1971This paper presents two novel models of catalysis on wide-band-gap semiconductors: injection of electrons (holes) into the conduction (valence) band by donor (acceptor) intermediates and extraction of electrons (holes) by acceptor intermediates in concurrence, while the catalytic surface reaction via ionic intermediates is in progress.
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Organosilane-functionalized wide band gap semiconductor surfaces
Applied Physics Letters, 2007Surface functionalization of wide band gap semiconductors, SiC, ZnO, and GaN, with organosilane is reported. Formation of self-assembled monolayers of mercaptopropyltrimethoxysilane is confirmed by x-ray photoelectron spectroscopy and atomic force microscopy.
R. M. Petoral +4 more
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Exciton tunneling in wide-band-gap semiconductors
SPIE Proceedings, 1996We have studied exciton tunneling in (Zn,Cd)Se/ZnSe asymmetric double quantum wells using femtosecond time resolved transmission, photoluminescence and time-resolved photoluminescence measurements. The strong Coulomb correlation as well as Frohlich electron LO-phonon interaction in II-VI semiconductors make the tunneling process significantly different
Sergey Y. Ten +3 more
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(GaMg)N — New Wide Band Gap Semiconductor
physica status solidi (a), 1999We have synthesized a new wide band-gap semiconductor, Ga0.25Mg0.25N0.5, by means of high-pressure, high-temperature method. We characterized the obtained material by X-ray diffraction revealing that it forms a single crystal with unit cell of P3 hexagonal symmetry and a = 3.277 A, c = 16.065 A (almost three times larger than the c-lattice constant of ...
T. Suski +6 more
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Wide Band Gap Semiconductor Technology Initiative
2004Abstract : Investigations have been concerned with substrate etching, thin film growth and doping and the growth of pin structures coupled with structural, microstructural, thickness, optical and electrical characterizations. Maps of the FWHM of the x-ray rocking curves reveal that both the number and the degrees of tilt of the domains in the (112-0 ...
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