Results 221 to 230 of about 13,430 (257)

Review on Wide Band Gap Semiconductor

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), 2022
Arnima Das, Maitreyi Ray Kanjilal, Moumita Mukherjee, Arpita Santra   +3 more
openaire   +1 more source

Wide band gap ferromagnetic semiconductors and oxides

Journal of Applied Physics, 2003
Recent advances in the theory and experimental realization of ferromagnetic semiconductors give hope that a new generation of microelectronic devices based on the spin degree of freedom of the electron can be developed. This review focuses primarily on promising candidate materials (such as GaN, GaP and ZnO) in which there is already a technology base ...
S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim, L. A. Boatner   +10 more
openaire   +1 more source

Simulation of Carrier Transport in Wide Band Gap Semiconductors

International Journal of High Speed Electronics and Systems, 2001
Dept. of Electrical Engineering, Boston University, Boston, MA. 02215. Movaz Networks, 5445 Triangle Parkway, Norcross, GA 30092 Dipartimento di Elettronica, Politecnico di Torino, corso Duca degli Abruzzi 24,110129 Torino, Italy Dept. of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden.
E. BELLOTTI, M. FARAHMAND, GOANO, MICHELE, E. GHILLINO, C. GARETTO, GHIONE, GIOVANNI, H. E. NILSSON, K. F. BRENNAN, P. P. RUDEN   +8 more
openaire   +1 more source

Nanoparticle composites: FePt with wide-band-gap semiconductor

Journal of Magnetism and Magnetic Materials, 2006
We present a simple way to synthesize FePt and ZnO (wide-band-gap semiconductor) nanoparticle composites. The FePt nanoparticles were fabricated using the method reported by Sun et al. By controlling the heating rate, 3 nm FePt nanoparticles were synthesized.
Lu, M., Gong, H., Song, T., Wang, J.-P., Zhang, H.-W., Zhou, T.J.   +5 more
openaire   +1 more source

Wide-band gap semiconductors for noncontact thermometry

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2001
The advantages achieved in two-color optical pyrometry using wide-band gap semiconductors (e.g., silicon carbide, gallium arsenide) and silicon-based photosensors for short- and long-wavelength light detection, respectively, are demonstrated here. Spectral responsivities of Si-, SiC-, and GaN-based photodiodes are used to evaluate the performances of a
openaire   +1 more source

Role of native defects in wide-band-gap semiconductors

Physical Review Letters, 1991
Wide-band gap semiconductor typically can be doped either n-type or p-type, but not both. Compensation by native defects has often been invoked as the source of this difficulty. Using first-principles total-energy calculations we show that, for ZnSe and diamond, native-defect concentrations are too low to cause compensation. For nonstoichiometric ZnSe,
, Laks, , Van de Walle CG, , Neumark, , Pantelides   +3 more
openaire   +2 more sources

Ion Implantation into Wide Band Gap Semiconductors

1995
There are discussed the major peculiarities which must be taken into account when the accelerated ions are used for the modification of the properties of solids with a wide bandgap (over ~2 eV). Such solids are interesting for both the fundamental research and for such applications as optoelectronics and high-temperature devices.
openaire   +1 more source

Magnetic resonance linear accelerator technology and adaptive radiation therapy: An overview for clinicians

Ca-A Cancer Journal for Clinicians, 2022
William A Hal, X Allen Li, Daniel A Low
exaly  

Contacts to Wide-Band-Gap Semiconductors

2011
L.M. Porter, K. Das, Y. Dong, J.H. Melby, A.R. Virshup   +4 more
openaire   +1 more source

Low-dimensional wide-bandgap semiconductors for UV photodetectors

Nature Reviews Materials, 2023
Ziqing Li, Xiaosheng Fang
exaly