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Letter to the editor regarding "Combined uterine injury and high rectal perforation complicating abdominal ectopic pregnancy: A case report". [PDF]

Int J Surg Case Rep
Augustin G.
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Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction

IEEE Transactions on Circuits and Systems I: Regular Papers, 2021
Essential design requirements for a sense amplifier (SA) used in the resistance monitoring write termination (RM-WT) scheme are suggested to reduce the write energy of spin-transfer-torque random access memory (STT-RAM) while achieving a write pass yield comparable to that of a conventional write operation.
Sara Choi, Hong Keun Ahn, Byungkyu Song, Seung H. Kang, Seong-Ook Jung   +4 more
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STT-RAM write energy consumption reduction by differential write termination method

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015
Spin-transfer torque random access memory (STT-RAM) has emerged as an attractive candidate for future non-volatile memories. However, the write operation in 1T-1MTJ STT-RAM bit-cells is asymmetric and stochastic which leads to high energy consumption and long latency.
Hooman Farkhani, Ali Peiravi, Jens K. Madsen, Farshad Moradi   +3 more
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Family Letter Writing in Terminal Cancer

OMEGA - Journal of Death and Dying, 2020
In this article, I examine relational dynamics within a family who exchange letters after the experience of terminal cancer. The collected letters of a terminally ill husband and father to his children are presented as documents for growth. The letters are explored as a meaning making narrative of a family affected by loss and uncharted territory.
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Self-Terminated Write-Assist Technique for STT-RAM

IEEE Transactions on Magnetics, 2016
The main challenge in the programming of spin transfer torque (STT)-RAM is to reduce the associated power consumption without the increase in area. This paper proposes a novel self-terminated write-assist technique to cutoff the unnecessary writing power consumption and then compares its delay and writing power consumption with the previously reported ...
Mohit Kumar Gupta, Mohd. Hasan
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Energy reduction for STT-RAM using early write termination

Proceedings of the 2009 International Conference on Computer-Aided Design, 2009
The emerging Spin Torque Transfer memory (STT-RAM) is a promising candidate for future on-chip caches due to STT-RAM's high density, low leakage, long endurance and high access speed. However, one of the major challenges of STT-RAM is its high write current, which is disadvantageous when used as an on-chip cache since the dynamic power generated is too
Ping Zhou, Bo Zhao, Jun Yang, Youtao Zhang   +3 more
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STT-RAM Energy Reduction Using Self-Referenced Differential Write Termination Technique

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2017
Spin-transfer torque random access memory (STT-RAM) has emerged as an attractive candidate for future nonvolatile memories. It advantages the benefits of current state-of-the-art memories including high-speed read operation (of static RAM), high density (of dynamic RAM), and nonvolatility (of flash memories). However, the write operation in the 1T-1MTJ
Hooman Farkhani, Mohammad Tohidi, Ali Peiravi, Jens Kargaard Madsen, Farshad Moradi   +4 more
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Dynamic-Reference Based Early Write Termination for Low Energy SOT-MRAM

2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020
Although considered as one of the most viable emerging non-volatile memory, the spin-transfer-torque magnetic random access memory (STT-MRAM) suffers from its weakness in the write operation. Spin-orbit torque magnetic random access memory (SOT-MRAM) has been recently proposed to provide lower write energy consumption.
Taehwan Kim, Eunjong Yeo, Yunho Jang, Yeongkyo Seo, Jongsun Park   +4 more
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DUSTER: DUal Source Write TERmination Method for STT-RAM Memories

2018 21st Euromicro Conference on Digital System Design (DSD), 2018
To overcome CMOS challenges including leakage power, volatility, scalability, and soft error vulnerability, Spin Transfer Torque Random Access Memory (STT-RAM) as a non-volatile memory has been utilized. Write error occurring because of variation in the fabrication process is one of the disadvantages of STT-RAM just like other devices.
Saaed S. Faraji, Javad Talafy, Amir M. Hajisadeghi, Hamid R. Zarandi   +3 more
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Technical Writing and Terminal Modification

Journal of Technical Writing and Communication, 1992
Because of the work of Francis Christensen, sentence-terminal modification was emphasized in college composition from about 1965 to 1980. The structures emphasized included absolutes, restating and summarizing appositives, participial phrases, non-participial adjective phrases, adjectival clauses and prepositional phrases, and adverbial clauses and ...
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