Results 131 to 140 of about 29,896 (261)

Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

, 1999
Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate,
Xu HZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China., Xu B, Xu HZ, Zhou W, Wang ZG, Jiang WH   +5 more
core  

Nanoscale Confinement Enhances Ultrafast Demagnetization

Advanced Science, EarlyView.
Next generation spintronics may depend on successfully combining femtosecond spin dynamics with nanoscale device miniaturization. We address this by systematically studying the effect of nanoscale confinement on the femtosecond demagnetization of Iron. By combining ultrafast experiments sensitive to spins, charge carriers, and phonons, we uncover a nm ...
Yoav William Windsor, Tobias Lojewski, Moumita Kundu, Klaus Sokolowski‐Tinten, Nico Rothenbach, Andrea Eschenlohr, Markus Ernst Gruner, Katharina Ollefs, Carolin Schmitz‐Antoniak, Soma Salamon, Daniela Zahn, Laurenz Rettig, Christian Schüßler‐Langeheine, Niko Pontius, Renkai Li, Mianzhen Mo, Suji Park, Xiaoshe Shen, Stephen Weathersby, Xijie Wang, Rossitza Pentcheva, Heiko Wende, Ulrich Nowak, Uwe Bovensiepen   +23 more
wiley   +1 more source

PRESSURE BEHAVIOR OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTHS

, 1991
The photoluminescence of InxGa1-xAs/GaAs strained quantum wells with widths of 30 angstrom to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It is found that the pressure coefficients of exciton peaks from 1st conduction
LI GH, LI GH CHINESE ACAD SCINATL LAB SEMICOND SUPERLATTICESBEIJINGPEOPLES R CHINA, WANG ZP, ZHENG BZ, HAN HX   +4 more
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Synergistic NiO‐NiCo Heterostructure Electrode for Highly Active and Durable Hydrogen Evolution in Industrial Alkaline Water Electrolysis

Advanced Science, EarlyView.
This study presents a NiO–NiCo heterostructure electrode that enhances water dissociation and hydrogen adsorption through synergistic interfacial interactions, verified by electrochemical and spectroscopic analyses. Its high performance in a large‐area single‐cell system under dynamic conditions demonstrates how rational non‐precious catalyst design ...
Jinwoo Lee, Kyungbeen Yeom, Gaeun Hong, Yoojin Shin, Ji Seong Hyoung, Ji Eun Park, Heonjoong Lee, Taeyang Han, Yung‐Eun Sung, Jeong Won Kang, Kyoung‐Soo Kang, Hyunjoon Lee   +11 more
wiley   +1 more source

EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface

, 1996
The interfacial behavior of the single quantum well (SQW) GaAs/AlxGa1-xAs electrode in HQ/BQ and Fc/Fc(+) electrolytes was characterized respectively by studying the quantum confined Stark effect and Franz-Keldysh oscillation with electrolyte ...
Xiao XR, Liu Y, Wang RZ, Li DL, Zeng YP, Yang CH, Sun DZ   +6 more
core  

French CRG XAS beamlines Handbook

11 Introduction | 12 Beamline optical constituents | 14 Mandatory information to describe an experiment | 16 List of acronyms | 17 Selected general formula | 18 EXAFS equation | 19 XAS mode of detection | 22 Self-Absorption effects | 25 ...
Hazemann, Jean-Louis, F, Hubert, Zoltan, Blommaert, Hester, Vidal, Vladimir, Kieffer, Isabelle, Min, Sophie, Proux, Olivier, Lahera, Eric, Rovezzi, Mauro, Joly, Yves, da Silva, Julio Cesar, Longo, Alessandro, Muñoz, Manuel, Boudjehem, Mohamed Redhouane, Maurin, Isabelle, Aguilar-Tapia, Antonio, Kulow, Anico, Nassereddine, Abdallah, Arnaud, Robin, Chaurand, Perrine, Testemale, D., Borschneck, D   +21 more
core   +1 more source

Orientation‐Engineered Insulator‐Metal Transition in Vanadium Dioxide

Advanced Science, EarlyView.
Crystallographic orientation engineering in VO2/TiO2 heterostructures enables tunable insulator‐metal transitions. The high‐Miller‐index (102) orientation breaks in‐plane mirror symmetry, inducing anisotropic transport, while its inclined oxygen channels accelerate protonation kinetics.
Xuanchi Zhou, Xiaohui Yao, Wentian Lu, Chunwei Yao, Xiaomei Qiao   +4 more
wiley   +1 more source

Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

, 2006
4.2 K photoluminescence (PL) and 77 K standard Hall-effect measurements were performed for In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor (HEMT) structures grown on GaAs substrates with different indium contents in the InxGa1-xAs
Cui, LJ, Chinese Acad Sci, Novel Mat Lab, Inst Semicond, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn, Zhu ZP (Zhu Z. P.), Cui LJ (Cui L. J.), Zeng YP (Zeng Y. P.), Guo SL (Guo S. L.), Wang BQ (Wang B. Q.), Chu JH (Chu J. H.)   +6 more
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TiO6 as a Compensatory Structural Unit in Co‐Free, High‐Ni Layered Oxide for Durable Lithium‐Ion Batteries

Advanced Science, EarlyView.
Ti substitution stabilizes Co‐free high‐Ni layered oxides through both structural and electronic effects. TiO6 octahedra act as compensatory structural units that help interrupt cooperative Jahn–Teller distortion and suppress detrimental phase transitions, while the electron‐withdrawing inductive effect of Ti stabilizes the oxygen lattice. As a result,
Bixian Ying, Zhenjie Teng, Jun Wang, Honghong Tian, Charlotte von Petersdorff‐Campen, Rommel T. Tolla, Iuliia Mikulska, Linus Voigt, Sascha Nowak, Verena Naber, Alexander Schökel, Yuanming Liu, Michael Merz, Peter Nagel, Stefan Schuppler, Katja Frenzel, Adrian Jonas, Lena Mathies, Martin Winter, Karin Kleiner   +19 more
wiley   +1 more source

The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions

Тонкие химические технологии, 2014
In this paper, we investigate the possibility of using gas mixer precursor for MOCVD to get sharper heterojunctions InxGa1-xAs, InxGa1-xAs и InxAl1-xAs.
A. A. Gorskiy
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