Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD
International Journal of Photoenergy, 2021 In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided.
Marwa S. Salem +7 more
doaj +2 more sources
A Symmetric U-Shaped Gate Tunnel FET-ISFET Hybrid Label-Free Biosensor for Highly Sensitive DNA Detection [PDF]
SensorsIon-Sensitive Field-Effect Transistors (ISFETs) have been extensively used to detect various biomolecules, as the intrinsic charge of these molecules can change the transistor’s current or threshold voltage.
Yourui An +6 more
doaj +2 more sources
High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor [PDF]
Журнал нано- та електронної фізики, 2011 In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices.
N.P. Maity +3 more
doaj +3 more sources
Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits [PDF]
International Journal of Electronics and Telecommunications, 2021 This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model
Billel Smaani +5 more
doaj +1 more source
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
Nanoscale Research Letters, 2022 In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2.
Wei He +12 more
doaj +1 more source
The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy
IEEE Access, 2020 We present numerical methods to enable accurate and robust level-set based simulation of anisotropic wet etching and non-planar epitaxy for semiconductor fabrication.
Alexander Toifl +6 more
doaj +1 more source
Prediction and Simulation of electrical and optical characteristics of an OLED based on P3BEdotBT3A organic material [PDF]
E3S Web of Conferences, 2022 The OLED “organic light-emitting diode” has been highly industrialized for several years, especially since their use in smartphones and televisions. OLEDs have attracted a lot of attention because of their desirable characteristics including their low ...
El karkri Anass +2 more
doaj +1 more source
Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD
Journal of Physics: Conference Series, 2020 Abstract In this paper, a comprehensive comparison of TFET simulations using two TCAD simulators, Sentaurus and Silvaco TCAD, is presented. The comparison is fully cover various types of TFETs, either from the structure geometry or the materials point of view, which proved a framework for TFET designs and simulations. For Sentaurus TCAD,
Amira Nabil +4 more
openaire +1 more source
High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021 In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland +11 more
doaj +1 more source
A Carbon Nanotube (CNT)-based SiGe Thin Film Solar Cell Structure [PDF]
Journal of Optoelectronical Nanostructures, 2021 در این مقاله ، ساختاری از سلول خورشیدی فیلم نازک SiGe بر اساس نانولوله کربنی (CNT) ارائه شده است. ما طراحی و شبیه سازی دستگاه را با استفاده از Silvaco TCAD ارائه می دهیم.
Homa hashemi madani +2 more
doaj +1 more source