A Symmetric U-Shaped Gate Tunnel FET-ISFET Hybrid Label-Free Biosensor for Highly Sensitive DNA Detection [PDF]
Ion-Sensitive Field-Effect Transistors (ISFETs) have been extensively used to detect various biomolecules, as the intrinsic charge of these molecules can change the transistor’s current or threshold voltage.
Yourui An +6 more
doaj +2 more sources
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2.
Wei He +12 more
doaj +1 more source
Prediction and Simulation of electrical and optical characteristics of an OLED based on P3BEdotBT3A organic material [PDF]
The OLED “organic light-emitting diode” has been highly industrialized for several years, especially since their use in smartphones and televisions. OLEDs have attracted a lot of attention because of their desirable characteristics including their low ...
El karkri Anass +2 more
doaj +1 more source
The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy
We present numerical methods to enable accurate and robust level-set based simulation of anisotropic wet etching and non-planar epitaxy for semiconductor fabrication.
Alexander Toifl +6 more
doaj +1 more source
A Carbon Nanotube (CNT)-based SiGe Thin Film Solar Cell Structure [PDF]
در این مقاله ، ساختاری از سلول خورشیدی فیلم نازک SiGe بر اساس نانولوله کربنی (CNT) ارائه شده است. ما طراحی و شبیه سازی دستگاه را با استفاده از Silvaco TCAD ارائه می دهیم.
Homa hashemi madani +2 more
doaj +1 more source
High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland +11 more
doaj +1 more source
Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD
In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided.
Marwa S. Salem +7 more
doaj +1 more source
TCAD simulation using Silvaco software has shown that the 3G_DFM, which has SG1 (Select Gate 1), PL (Plate Line Gate), and SG2 (Select Gate 2) between SL (Source Line) and BL (Bit Line), has a long retention time of 100ms at 85 °C, and a robust ...
Koji Sakui +6 more
doaj +1 more source
Accelerating Flux Calculations Using Sparse Sampling
The ongoing miniaturization in electronics poses various challenges in the designing of modern devices and also in the development and optimization of the corresponding fabrication processes. Computer simulations offer a cost- and time-saving possibility
Lukas Gnam +4 more
doaj +1 more source
Improved Perovskite Solar Cell Performance Using Semitransparent CNT Layer [PDF]
In this paper, the effect of using semi-transparent Carbonnanotube layer (CNT) on the efficiency of perovskitesolar cell (PSC) is investigated. One of the mostimportant process in PCS is charge collecting. In thisregard, Carbon nanotubes have the ability
Mansureh Roohollahi +2 more
doaj +1 more source

