Study of reduced self-heating effect in βGa2O3 on a different substrates utilizing SILVACO TCAD / Muhd Izhar Shahrul Anuar [PDF]
, 2020 The architecture of high-power electronics proficient of operating at high temperatures without the need for comprehensive device heat reduction is desirable in wide sectors mainly industrial βGa2O3 is a preferable wide band gap semiconductor for having ...
Shahrul Anuar, Muhd Izhar
core
EcoMat, Volume 8, Issue 5, May 2026.This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail +9 more
wiley +1 more source
Computer simulation of GaAs and SOI devices using TCAD tools: an REU project [PDF]
, 1999 An undergraduate research project is outlined whose goal was to use the TCAD tools to simulate the performances of GaAs- and SOI-based devices and to compare them with the corresponding silicon-based devices.
Bergstrom, Sarah +2 more
core +1 more source
Research of self-formation nanostructures / Nanodarinių formavimosi procesų tyrimas
Mokslas: Lietuvos Ateitis, 2011 Lateral etching processes for the modeling of the geometry of self-formation nanostructures with Silvaco TCAD Athena program are analyzed. Self-formation nanostructures is modeled with different mask selectivity values equal to 2, 10, 40 and 100 with ...
Romas Petrauskas
doaj
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source
Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor
Advanced Functional Materials, Volume 36, Issue 34, 27 April 2026.Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo +10 more
wiley +1 more source
Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD [PDF]
, 2017 This work presents a SILVACO TCAD based fabrication and device simulation of a top-gated graphene field-effect transistor. Effects of channel length and channel doping concentrations on the characteristics curves (transfer and output characteristics) of ...
Chowdhury, Md. Iqbal Bahar +3 more
core
Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs [PDF]
, 2021 In recent years, demands for high speed and low power circuits have been raised. As conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to satisfy the demands due to short channel effects, the purpose of the study is to ...
Lahudkar, Swapnil Laxman +1 more
core +1 more source
A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel
Journal of Electrical and Computer Engineering, 2022 In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. The channels of the new device consist of a vertical subchannel and two horizontal subchannels.
Zening Mo, Zhidi Jiang, Jianping Hu
doaj +1 more source
Solution Processed Polymer Source‐Gated Transistors for Zero‐Power Photosensing
Advanced Electronic Materials, Volume 12, Issue 7, 6 April 2026.This study demonstrates the first solution‐processed bulk heterojunction organic source‐gated transistors (OSGTs) and photo‐OSGTs fabricated using DPP‐DTT: PCBM. Copper‐electrode OSGTs show deep off‐state at zero gate‐source voltage, channel length‐independent on‐state current, and low voltage saturation (γ = 0.22).
Eva Bestelink +6 more
wiley +1 more source