Results 41 to 50 of about 1,120 (211)
Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation [PDF]
Журнал нано- та електронної фізики, 2014 Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration.
A.B. Gnilenko, S.V. Plaksin
doaj
AIP Advances, 2018 In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao +4 more
doaj +1 more source
Fabrication and Simulating Solar Cell Devices using Silvaco TCAD Tools [PDF]
, 2013 Solar cells are p-i-n photodiodes, which are operated under forward bias. The intention is to convert the incoming optical power into electrical power with maximum efficiency. In this paper we are going to design a solar cell and simulation of solar cell
Srivastava, Anand Kumar +1 more
core +1 more source
Advanced Electronic Materials, EarlyView.Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
Simulation of Dual Gate TFET Using Silvaco TCAD
International Journal of Scientific Research in Engineering and ManagementAbstract – The project aims to investigate the fundamental operating principles and performance characteristics of TFETs, which are promising candidates for low-power electronics due to their potential for a sub-60 mV/decade subthreshold swing. A Intrinsic channel silicon DG-TFET with a p-in structure was simulated.
Enagandhula Ajith +4 more
openaire +1 more source
Advanced Intelligent Systems, EarlyView.A tandem neural network directly solves the multivalued inverse problem of extracting semiconductor parameters from transistor measurements. Trained on only 1000 simulations, the network infers six material parameters (e.g., defect states, carrier concentration, mobility) in under 1 ms, demonstrating a broadly applicable framework for semiconductor ...
Masatoshi Kimura +8 more
wiley +1 more source
Study on the effect of short gate length on 65nm NMOS transistor using SILVACO TCAD / Azira Ahmad Tarmizi [PDF]
, 2020 The aim of this work is to design and study on the effect of short gate length of 65nm NMOS transistor using SILVACO TCAD. A 65nm NMOS was designed and fabricated to study its electrical characteristics.
Ahmad Tarmizi, Azira
core
Computer simulation of GaAs and SOI devices using TCAD tools: an REU project [PDF]
, 1999 An undergraduate research project is outlined whose goal was to use the TCAD tools to simulate the performances of GaAs- and SOI-based devices and to compare them with the corresponding silicon-based devices.
Bergstrom, Sarah +2 more
core +1 more source
Optimization AlGaN/GaN HEMT with Field Plate Structures
Micromachines, 2022 AlGaN/GaN HEMTs with several different designs of field plate structure are studied for device optimization purposes. To increase device breakdown voltage, optimal dimensions of field plates were first investigated using Silvaco TCAD software, and the ...
Ningping Shi +4 more
doaj +1 more source
Study of reduced self-heating effect in βGa2O3 on a different substrates utilizing SILVACO TCAD / Muhd Izhar Shahrul Anuar [PDF]
, 2020 The architecture of high-power electronics proficient of operating at high temperatures without the need for comprehensive device heat reduction is desirable in wide sectors mainly industrial βGa2O3 is a preferable wide band gap semiconductor for having ...
Shahrul Anuar, Muhd Izhar
core