Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer
Results in Physics, 2021 A comprehensive study on an E-mode AlGaN/GaN MIS-HEMT with triple barrier layer is conducted by Silvaco TCAD software. The effect of geometric parameters of gate dielectric layer, including the length of both sides and the recessed depth, on the device ...
Fan Xia +7 more
doaj +1 more source
Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium-Doped MoO<sub>X</sub> as Hole Transport Layers. [PDF]
Adv Sci (Weinh)This work reveals that the migration and accumulation of oxygen vacancies lead to surface charge inversion in MoOX, which degrades device performance. Vanadium doping effectively increases the vacancy migration barrier, enhances material stability, elevates the work function, and broadens the bandgap.
Cai H +8 more
europepmc +2 more sources
Optimizing floating guard ring designs for FASPAX N-in-P silicon sensors
, 2016 FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with ...
Bradford, Robert +6 more
core +1 more source
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +2 more
core +1 more source
Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation [PDF]
Журнал нано- та електронної фізики, 2014 Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration.
A.B. Gnilenko, S.V. Plaksin
doaj
AIP Advances, 2018 In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao +4 more
doaj +1 more source
Description of radiation damage in diamond sensors using an effective defect model
, 2017 The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors poly-crystalline diamond sensors are used. Here high particle rates occur from the colliding beams scattering particles outside the beam pipe.
Dabrowski, Anne +3 more
core +1 more source
A multi-scale modeling of junctionless field-effect transistors [PDF]
, 2013 In this work, we simulate a realistic junctionless (JL) field-effect transistor using a multi-scale approach. Our approach features a combination of the first-principles atomistic calculation, semi-classical semiconductor device simulation, compact model
Chen, G +7 more
core +1 more source
Advanced Electronic Materials, EarlyView.Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
From the organic thin film transistor to the 3-D textile organic cylindrical transistors - perspectives, expectations and predictions [PDF]
, 2017 In this paper we examine the possibility to simulate and study the behaviour of a fiber-based Textile Transistor in a commercial TCAD system. We also examine the capability of such transistors to operate in sufficiently low voltages, aiming to the ...
Louris, E. +4 more
core +2 more sources