Results 51 to 60 of about 1,120 (211)

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim, Jae Won Lee, Wonbeen Jeong, Eun Kwang Lee, Jiyoul Lee   +4 more
wiley   +1 more source

Comparison of electrical performances of two n-in-p detectors with different implant type of guard ring by TCAD simulation

Results in Physics, 2016
This paper presents a preliminary comparative study for two different guard rings structures in the purpose of evaluating their electrical performances. The two structures are based on the n-in-p technology with different implant type of guard rings. I–V
Mohammed Mekheldi, Slimane Oussalah, Abdenour Lounis, Nourredine Brihi   +3 more
doaj   +1 more source

Detection of Toxic Gases and Volatile Organic Compounds Using Highly Adsorptive Nanomaterials: A Comprehensive Assessment

EcoMat, Volume 8, Issue 5, May 2026.
This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail, Sabbah Ataya, Mohamed M. Goda, Ahmed G. Hussein, Ahmed Ramah, Ahmad G. Ramadan, Rashid Khan, Joy Djuansjah, Swellam W. Sharshir, Ahmed El‐Harairy   +9 more
wiley   +1 more source

Etude et simulation d’un transistor VDMOS avec TCAD SILVACO [PDF]

, 2014
51 f. : ill. ; 30 cm. (+ CD-Rom)L’électronique de puissance constitue de différentes axes de recherche qui nous a permet de les appliqué dans plusieurs système et différentes domaines.
Houari Ridha
core  

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs [PDF]

, 2021
In recent years, demands for high speed and low power circuits have been raised. As conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to satisfy the demands due to short channel effects, the purpose of the study is to ...
Lahudkar, Swapnil Laxman, Tayade, Vinod Pralhad   +1 more
core   +1 more source

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

Advanced Functional Materials, Volume 36, Issue 34, 27 April 2026.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo, Junsung Byeon, Jungmoon Lim, Sohyeon Park, Sungsan Kang, Byeongchan Kim, Gyuhwi Jeong, Haerim Kim, Bongjun Kim, SeungNam Cha, Sangyeon Pak   +10 more
wiley   +1 more source

Research of self-formation nanostructures / Nanodarinių formavimosi procesų tyrimas

Mokslas: Lietuvos Ateitis, 2011
Lateral etching processes for the modeling of the geometry of self-formation nanostructures with Silvaco TCAD Athena program are analyzed. Self-formation nanostructures is modeled with different mask selectivity values equal to 2, 10, 40 and 100 with ...
Romas Petrauskas
doaj  

A core drain current model for β-Ga2O3 power MOSFETs based on surface potential

AIP Advances, 2023
For the first time, a core drain current model based on surface potential without any implicit functions is developed for beta-phase gallium oxide (β-Ga2O3) power metal-oxide-semiconductor field-effect transistors (MOSFETs).
Kai Zhou, Songming Miao, Xuanze Zhou, Guangwei Xu, Lingfei Wang, Shibing Long   +5 more
doaj   +1 more source

Solution Processed Polymer Source‐Gated Transistors for Zero‐Power Photosensing

Advanced Electronic Materials, Volume 12, Issue 7, 6 April 2026.
This study demonstrates the first solution‐processed bulk heterojunction organic source‐gated transistors (OSGTs) and photo‐OSGTs fabricated using DPP‐DTT: PCBM. Copper‐electrode OSGTs show deep off‐state at zero gate‐source voltage, channel length‐independent on‐state current, and low voltage saturation (γ = 0.22).
Eva Bestelink, Ahmed Wafic, Mattia Scagliotti, Dimitar Kutsarov, Imalka Jayawardena, Matteo Rapisarda, Radu A. Sporea   +6 more
wiley   +1 more source