Results 51 to 60 of about 2,176 (209)
EcoMat, Volume 8, Issue 5, May 2026.This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail +9 more
wiley +1 more source
A core drain current model for β-Ga2O3 power MOSFETs based on surface potential
AIP Advances, 2023 For the first time, a core drain current model based on surface potential without any implicit functions is developed for beta-phase gallium oxide (β-Ga2O3) power metal-oxide-semiconductor field-effect transistors (MOSFETs).
Kai Zhou +5 more
doaj +1 more source
Optimization AlGaN/GaN HEMT with Field Plate Structures
Micromachines, 2022 AlGaN/GaN HEMTs with several different designs of field plate structure are studied for device optimization purposes. To increase device breakdown voltage, optimal dimensions of field plates were first investigated using Silvaco TCAD software, and the ...
Ningping Shi +4 more
doaj +1 more source
Substrate Current Evaluation for Lightly and Heavily Doped MOSFETs at 45 Nm Process Using Physical Models [PDF]
, 2016 Substrate noise is a major integration issue in mixed signal circuits; particularly at radio frequency (RF) it becomes a key issue. In deep sub micron MOSFETs hot carrier effect induces device degradation.
Janyani, V. (Vijay) +2 more
core +1 more source
Modeling and simulation of electrolyte pH change in conventional ISFET using commercial Silvaco TCAD [PDF]
IOP Conference Series: Materials Science and Engineering, 2019 Abstract This paper proposes a numerical simulation approach to study the electrolyte pH change of ion-sensitive field effect transistor (ISFET) structures using Silvaco technology computer-aided design (TCAD) tools. This paper examines the ISFET device’s electrical response to electrolyte pH change.
Ahmed M. Dinar +5 more
openaire +1 more source
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source
Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor
Advanced Functional Materials, Volume 36, Issue 34, 27 April 2026.Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo +10 more
wiley +1 more source
Results in Physics, 2016 This paper presents a preliminary comparative study for two different guard rings structures in the purpose of evaluating their electrical performances. The two structures are based on the n-in-p technology with different implant type of guard rings. I–V
Mohammed Mekheldi +3 more
doaj +1 more source
Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs
, 2019 In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain.
Dolmanan, Surani B. +4 more
core +1 more source
Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications [PDF]
, 2016 The paper presents the quantum mechanical analysis of Gallium Nitride nanowire transistor. The effect of high k gate dielectric and different gate metals on the electrical characteristics of the device is studied.
Chatterjee, Neel, Pandey, Sujata
core +1 more source