Results 51 to 60 of about 10,669 (173)
Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip [PDF]
, 2007 This paper presents the study on the effect of doping process on the PMOS structure using Silvaco TCAD Tools. This research done by dope the P-type material into the polysilicon to observe the electrical properties and performance of PMOS structure at ...
Zulhanip, Aida Zulia
core
Design and TCAD Simulation of p+–n+ InAs‐Based TFET
Nano Select, Volume 7, Issue 3, March 2026.A physics‐based design and optimization of a p+−n+${{p}^ + } - {{n}^ + }$ InAs tunnel field‐effect transistor is presented using calibrated quantum‐corrected TCAD simulations. By employing a composite figure of merit that unifies digital and RF metrics, the proposed homojunction architecture achieves steep subthreshold swing, enhanced cutoff frequency,
Muhammad Elgamal +5 more
wiley +1 more source
Study on the Silicon based Hetero-Junction Structure Solar Cell by using Silvaco TCAD / Azaryna Noh [PDF]
, 2007 In this paper, the study on the silicon based hetero-j unction stnicture solar cell using Silvaco software packages has been demonstrated. In this study, hetero-j unction of nGaAs/n-Si/p-Si, n-AlGaAs/n-Si/p-Si, n-InP/n-Si/p-Si, and n-InGaAs/n-Si/p-Si ...
Noh, Azaryna
core
Graphene as transparent and current spreading electrode in silicon solar cell
AIP Advances, 2014 Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation.
Sanjay K. Behura +3 more
doaj +1 more source
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 3, March 2026.We present an analytical description of MOS electrostatics revealing a saturation of the inversion‐layerthickness and electric field, accompanied by the formation of an Esaki‐type tunneling barrier. A fullquantum‐mechanical calculation shows that band‐to‐band tunneling becomes significant above threshold, triggering charge injection into the interface ...
Pedro Pereyra
wiley +1 more source
The effect of etching process of NMOS structure using Silvaco TCAD tools [PDF]
, 2008 The effect due to the etching process of NMOS structure using Silvaco TCAD tools software was investigated using different etching methods by varying the etch rate and divergence rate.
Abd Rahim, Mohd Shahrir
core
Study of ISFET sensitivity to pH variations using Silvaco TCAD [PDF]
Chemical sensors are increasingly used in healthcare because of their small size, durability, low resistance, and quick reaction time. This research aims to develop a pH biosensor utilizing an ion-sensitive field-effect transistor (ISFET) simulated with ...
Zain, Anis Suhaila Mohd; Universiti Teknikal Malaysia Melaka +5 more
core +1 more source
Nauka ta progres transportuМета. Це дослідження спрямовано на вдосконалення конструкції багатоперехідного сонячного елемента з вертикально розташованими p–n переходами для підвищення ефективності фотоелектричного перетворення в разі похилого падіння сонячних променів.
A. B. Gnilenko, S. V. Plaksin
doaj +1 more source
Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang +12 more
wiley +1 more source
Using Bayesian Optimization to Increase the Efficiency of III‐V Multijunction Solar Cells
Advanced Theory and Simulations, Volume 9, Issue 2, February 2026.Technology Computer Aided Design (TCAD) modeling is crucial for designing complex optoelectronic devices like III‐V multijunction solar cells. Bayesian optimization is proposed as a robust method to address challenges in optimizing costly black‐box TCAD solvers.
Pablo F. Palacios, Carlos Algora
wiley +1 more source