Results 31 to 40 of about 10,669 (173)
AIP Advances, 2018 In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao +4 more
doaj +1 more source
physica status solidi (a), Volume 223, Issue 19, 6 October 2026.Cadmium‐free CuAlSe2 emerges as a promising buffer layer for Cu(In,Al)Se2 (CIAS) thin‐film solar cells. An optimal buffer thickness of 0.01 µm and a conduction band offset of −0.25 eV, combined with a NiO hole transport layer, increase the simulated efficiency from 16.9% to 26.39%.
Pierre Gérard Darel Kond Ngue
wiley +1 more source
A core drain current model for β-Ga2O3 power MOSFETs based on surface potential
AIP Advances, 2023 For the first time, a core drain current model based on surface potential without any implicit functions is developed for beta-phase gallium oxide (β-Ga2O3) power metal-oxide-semiconductor field-effect transistors (MOSFETs).
Kai Zhou +5 more
doaj +1 more source
Optimization AlGaN/GaN HEMT with Field Plate Structures
Micromachines, 2022 AlGaN/GaN HEMTs with several different designs of field plate structure are studied for device optimization purposes. To increase device breakdown voltage, optimal dimensions of field plates were first investigated using Silvaco TCAD software, and the ...
Ningping Shi +4 more
doaj +1 more source
Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.The synaptic behavior of MoS2/graphene floating‐gate structures is shown. A subthreshold slope of 25 mV/decade, a high current ON/OFF ratio of 1010$^{10}$ with sub‐nanowatt power consumption are achieved. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%.
Md. Ibrahim Ahmed, Sharnali Islam
wiley +1 more source
Study on the effect of short gate length on 65nm NMOS transistor using SILVACO TCAD / Azira Ahmad Tarmizi [PDF]
, 2020 The aim of this work is to design and study on the effect of short gate length of 65nm NMOS transistor using SILVACO TCAD. A 65nm NMOS was designed and fabricated to study its electrical characteristics.
Ahmad Tarmizi, Azira
core
Bias‐Tunable Two‐Terminal Organic Photodetector for Intelligent Imaging
Advanced Science, Volume 13, Issue 48, 28 August 2026.A vertically stacked two‐terminal photodetector with a symmetric donor–acceptor–donor trilayer active exhibits reconfigurable photoresponse with bias‐tunable magnitude and polarity, together with sub‐millisecond response speed and a wide tunable output window.
Sangin Hahn +2 more
wiley +1 more source
Results in Physics, 2016 This paper presents a preliminary comparative study for two different guard rings structures in the purpose of evaluating their electrical performances. The two structures are based on the n-in-p technology with different implant type of guard rings. I–V
Mohammed Mekheldi +3 more
doaj +1 more source
Advanced Intelligent Systems, Volume 8, Issue 8, August 2026.A tandem neural network directly solves the multivalued inverse problem of extracting semiconductor parameters from transistor measurements. Trained on only 1000 simulations, the network infers six material parameters (e.g., defect states, carrier concentration, mobility) in under 1 ms, demonstrating a broadly applicable framework for semiconductor ...
Masatoshi Kimura +8 more
wiley +1 more source
Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
wiley +1 more source