Results 31 to 40 of about 2,176 (209)
A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
Micromachines, 2022 In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer ...
Xiaodong Zhang +4 more
doaj +1 more source
Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns [PDF]
, 2010 A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means of realistic models and an improved optimization routine. The starting point device was the recent world-record monolithic GaInP/GaAs dual-junction solar
Adachi +8 more
core +2 more sources
Analytical modelling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects [PDF]
, 2009 International audienceIn this paper we present a compact model of Double-Gate MOSFET architecture including ballistic and quasi-ballistic transport down to 20 nm channel length.
Autran, Jean-Luc +3 more
core +3 more sources
Investigation of light trapping mechanism of Silicon solar cell performance utilizing Silvaco TCAD
Journal of Physics: Conference Series, 2020 Abstract In this project, an investigation on the effect of difference shapes of the top surface silicon (Si) solar cell as an antireflective (AR) layer was carried out. Texturing the top surface of silicon solar cell helps to reduce light reflection from the solar cell. The different surface texturing which is planar structure, columnar
A F Abd Rahim +6 more
openaire +1 more source
Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes
Micromachines, 2022 We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction.
Yi Fang, Ling Chen, Yuqi Liu, Hong Wang
doaj +1 more source
Simulation of radiation-induced defects
, 2015 Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics ...
Peltola, Timo
core +1 more source
Extending the bounds of performance in E-mode p-channel GaN MOSHFETs [PDF]
, 2016 An investigation of the distribution of the electric field within a normally-off p-channel heterostructure field-effect transistor in GaN, explains why a high |Vth| requires a reduction of the thickness of oxide and the GaN channel layer.
De Souza, M.M., Kumar, A.
core +1 more source
, 2014 The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses.
Dinu, N. +3 more
core +3 more sources
Electron Multiplying Low-Voltage CCD With Increased Gain [PDF]
, 2018 Novel designs for the gain elements in electron multiplying (EM) CCDs have been implemented in a device manufactured in a low voltage CMOS process.
Dunford, Alice +2 more
core +1 more source
Modeling and Design of Graphene GaAs Junction Solar Cell
Advances in Condensed Matter Physics, 2015 Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work ...
Yawei Kuang +6 more
doaj +1 more source