SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
Вестник Северо-Кавказского федерального университета, 2022 The program Silvaco TCAD simulated electrical parameters of solar cells based on AlxGa1-xAs - InxGa1-xAs - GaAs under AM 1.5 for different values of x.
Oleg V. Devitsky, Igor A. Sysoev
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Design and Simulation of SWIR nBn-InGaAs Photodetector with AlGaAs Barrier [PDF]
EPJ Web of ConferencesThe article discusses the simulation of an nBn-InGaAs photodetector using Silvaco TCAD at 300 K, focusing on optimizing the barrier performance and reducing the valence band offset.
Tok Çağrı +5 more
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A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
Micromachines, 2022 In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer ...
Xiaodong Zhang +4 more
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Performance of high-k dielectric material for short channel length MOSFET simulated using silvaco TCAD tools / Fatin Antasha Anizam … [et al.] [PDF]
, 2021 Short channel effect (SCE) occur in the MOSFET devices when the oxide layer became thinner, and the gate length become shorter. The purposed of this study is to find a new dielectric and gate material to replace the conventional oxide which is silicon ...
Ismail, Lyly Nyl +3 more
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The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs [PDF]
, 2013 In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold
Haifeng Sun +13 more
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A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification [PDF]
, 2021 International audienceDuring the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention besides the ...
Piccolboni, G. +15 more
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Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes
Micromachines, 2022 We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction.
Yi Fang, Ling Chen, Yuqi Liu, Hong Wang
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Silvaco TCAD Implementation of GaAs/GaSb Quantum Dot Solar Cell
, 2022 In this work a GaAs/GaSb-based p-i-n quantum dot solar cell (QDSC) has been implemented in Silvaco TACD environment. The addition of GaSb Quantum dots (QD) in the GaAs intrinsic layer extends the absorption capability, for which photons with higher wavelengths can be absorbed to photo-generate more carriers resulting in the increase of the conversion ...
openaire +1 more source
Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer
Results in Physics, 2021 A comprehensive study on an E-mode AlGaN/GaN MIS-HEMT with triple barrier layer is conducted by Silvaco TCAD software. The effect of geometric parameters of gate dielectric layer, including the length of both sides and the recessed depth, on the device ...
Fan Xia +7 more
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Modeling and Design of Graphene GaAs Junction Solar Cell
Advances in Condensed Matter Physics, 2015 Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work ...
Yawei Kuang +6 more
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