Results 11 to 20 of about 2,176 (209)
I-V Characteristics Model for AlGaN / GaN HEMTs Using Tcad-Silvaco
Journal of New Technology and Materials, 2014 We report some results the drain current characteristics of AlGaN/GaN HEMT(High Electron Mobility Transistor). on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values of the gate voltage using Tcad-Silvaco numerical simulation software.
Abdelmalek Douara +4 more
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Research possibilities of Silvaco TCAD for physical simulation of gallium nitride power transistor [PDF]
AIP Conference Proceedings, 2016 The article introduces the benefits and application features of Silvaco TCAD tools. The possibility of using Device Simulation Framework – ATLAS for GaN power transistor modeling demonstrated. The band diagram of the AlGaN/GaN heterostructure of power transistor built, taking into consideration the polarization processes and surface traps as a source ...
Olga Demchenko +2 more
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Memories - Materials, Devices, Circuits and Systems, 2023 TCAD simulation using Silvaco software has shown that the 3G_DFM, which has SG1 (Select Gate 1), PL (Plate Line Gate), and SG2 (Select Gate 2) between SL (Source Line) and BL (Bit Line), has a long retention time of 100ms at 85 °C, and a robust ...
Koji Sakui +6 more
doaj +1 more source
Accelerating Flux Calculations Using Sparse Sampling
Micromachines, 2018 The ongoing miniaturization in electronics poses various challenges in the designing of modern devices and also in the development and optimization of the corresponding fabrication processes. Computer simulations offer a cost- and time-saving possibility
Lukas Gnam +4 more
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An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation [PDF]
, 2018 Single-photon avalanche diodes (SPAD) are photodetectors with exceptional characteristics. This paper proposes a new approach to model them in Verilog-A HDL with the help of a powerful tool: TCAD simulation. Besides, to the best of our knowledge, this is
Carmona Galán, Ricardo +3 more
core +1 more source
Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations [PDF]
, 2017 TCAD simulations have been conducted on a CMOS image sensor in order to characterize the electrical component of the crosstalk between pixels through the study of the electric field distribution. The image sensor consists on a linear array of five pinned
Carmona Galán, Ricardo +2 more
core +1 more source
Improved Perovskite Solar Cell Performance Using Semitransparent CNT Layer [PDF]
Journal of Optoelectronical Nanostructures, 2023 In this paper, the effect of using semi-transparent Carbonnanotube layer (CNT) on the efficiency of perovskitesolar cell (PSC) is investigated. One of the mostimportant process in PCS is charge collecting. In thisregard, Carbon nanotubes have the ability
Mansureh Roohollahi +2 more
doaj +1 more source
Silvaco TCAD Implementation of GaAs/GaSb Quantum Dot Solar Cell
, 2023 In this work a GaAs/GaSb-based p-i-n quantum dot solar cell (QDSC) has been implemented in Silvaco TACD environment. The addition of GaSb Quantum dots (QD) in the GaAs intrinsic layer extends the absorption capability, for which photons with higher wavelengths can be absorbed to photo-generate more carriers resulting in the increase of the conversion ...
S.M. Shafkat Nawaz +2 more
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The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p–n-junctions [PDF]
Технологія та конструювання в електронній апаратурі, 2012 A multijunction silicon solar cell with vertical p–n junctions consisted of four serial n+–p–p+-structures was simulated using Silvaco TCAD software package.
A. B. Gnilenko +3 more
doaj +1 more source
Ternary logic decoder using independently controlled double-gate Si-NW MOSFETs
Scientific Reports, 2021 A ternary logic decoder (TLD) is demonstrated with independently controlled double-gate (ICDG) silicon-nanowire (Si-NW) MOSFETs to confirm a feasibility of mixed radix system (MRS). The TLD is essential component for realization of the MRS.
Seong-Joo Han +8 more
doaj +1 more source