Results 11 to 20 of about 1,120 (211)
Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD [PDF]
Journal of Physics: Conference Series, 2020 Abstract In this paper, a comprehensive comparison of TFET simulations using two TCAD simulators, Sentaurus and Silvaco TCAD, is presented. The comparison is fully cover various types of TFETs, either from the structure geometry or the materials point of view, which proved a framework for TFET designs and simulations. For Sentaurus TCAD,
Amira Nabil +4 more
core +4 more sources
Silvaco TCAD Implementation of GaAs/GaSb Quantum Dot Solar Cell [PDF]
, 2023 In this work a GaAs/GaSb-based p-i-n quantum dot solar cell (QDSC) has been implemented in Silvaco TACD environment. The addition of GaSb Quantum dots (QD) in the GaAs intrinsic layer extends the absorption capability, for which photons with higher wavelengths can be absorbed to photo-generate more carriers resulting in the increase of the conversion ...
S.M. Shafkat Nawaz +2 more
openaire +2 more sources
The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p–n-junctions [PDF]
Технологія та конструювання в електронній апаратурі, 2012 A multijunction silicon solar cell with vertical p–n junctions consisted of four serial n+–p–p+-structures was simulated using Silvaco TCAD software package.
A. B. Gnilenko +3 more
doaj +6 more sources
Research possibilities of Silvaco TCAD for physical simulation of gallium nitride power transistor [PDF]
AIP Conference Proceedings, 2016 The article introduces the benefits and application features of Silvaco TCAD tools. The possibility of using Device Simulation Framework – ATLAS for GaN power transistor modeling demonstrated. The band diagram of the AlGaN/GaN heterostructure of power transistor built, taking into consideration the polarization processes and surface traps as a source ...
Olga Demchenko +2 more
openaire +3 more sources
I-V Characteristics Model for AlGaN / GaN HEMTs Using Tcad-Silvaco
Journal of New Technology and Materials, 2014 We report some results the drain current characteristics of AlGaN/GaN HEMT(High Electron Mobility Transistor). on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values of the gate voltage using Tcad-Silvaco numerical simulation software.
Abdelmalek Douara +4 more
openaire +3 more sources
Modeling and simulation of electrolyte pH change in conventional ISFET using commercial Silvaco TCAD [PDF]
IOP Conference Series: Materials Science and Engineering, 2019 Abstract This paper proposes a numerical simulation approach to study the electrolyte pH change of ion-sensitive field effect transistor (ISFET) structures using Silvaco technology computer-aided design (TCAD) tools. This paper examines the ISFET device’s electrical response to electrolyte pH change.
Ahmed M. Dinar +5 more
openaire +3 more sources
Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD [PDF]
, 2017 This work presents a SILVACO TCAD based fabrication and device simulation of a topgated graphene field-effect transistor. Effects of channel length and channel doping concentrations on the characteristics curves (transfer and output characteristics) of the GFET are also investigated and analyzed physically to obtain more physical insight.
Chowdhury, Md. Iqbal Bahar +3 more
openaire +4 more sources
Unlocking the Sun's potential: Solar cell design empowered through BSF+ layer using Silvaco TCAD [PDF]
Solar cell technology plays a crucial role in the sustainable energy landscape, offering a promising avenue for renewable energy generation. In this study, we have presented a physical device simulation of a solar cell using Silvaco TCAD.
Ijaz, Sumbel +5 more
core +3 more sources
Study of ISFET sensitivity to pH variations using Silvaco TCAD [PDF]
TELKOMNIKA (Telecommunication Computing Electronics and Control)Chemical sensors are increasingly used in healthcare because of their small size, durability, low resistance, and quick reaction time. This research aims to develop a pH biosensor utilizing an ion-sensitive field-effect transistor (ISFET) simulated with ...
Nur Afiqah Hani Senin +5 more
core +4 more sources
Advanced TCAD modeling of HfO$_2$-based ReRAM: voupling redox reactions and thermal effects [PDF]
, 2023 International audienceThis paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the essential redox reactions ...
Blaise, Philippe +5 more
core +1 more source