The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p–n-junctions [PDF]
Технологія та конструювання в електронній апаратурі, 2012 A multijunction silicon solar cell with vertical p–n junctions consisted of four serial n+–p–p+-structures was simulated using Silvaco TCAD software package.
A. B. Gnilenko +3 more
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GaN-Based GAA Vertical CMOS Inverter
IEEE Journal of the Electron Devices Society, 2022 In this work, we simulate the static and dynamic characteristics of gallium nitride (GaN)-based gate-all-around (GAA) vertical nanowire complementary metal–oxide–semiconductor (CMOS) inverter. Based on the 3-D simulator of Silvaco-TCAD, the
Xinke Liu +7 more
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
core +1 more source
Ternary logic decoder using independently controlled double-gate Si-NW MOSFETs
Scientific Reports, 2021 A ternary logic decoder (TLD) is demonstrated with independently controlled double-gate (ICDG) silicon-nanowire (Si-NW) MOSFETs to confirm a feasibility of mixed radix system (MRS). The TLD is essential component for realization of the MRS.
Seong-Joo Han +8 more
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Determination of the Sensitive Volume and Critical Charge for Induction of SEU in Nanometer SRAMs [PDF]
فصلنامه علوم و فناوری فضایی, 2023 In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two important quantities in Single Event Upset (SEU) calculations have been determined. SEU is the most common event in space investigations.
Gholamreza Raisali +2 more
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Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
Micromachines, 2023 In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software.
Hanghang Lv +11 more
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Fabrication and Simulating Solar Cell Devices using Silvaco TCAD Tools [PDF]
, 2013 Solar cells are p-i-n photodiodes, which are operated under forward bias. The intention is to convert the incoming optical power into electrical power with maximum efficiency. In this paper we are going to design a solar cell and simulation of solar cell
Srivastava, Anand Kumar +1 more
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Optimization of 3D shell electrode detectors—A type of honeycomb shell electrode detector
AIP Advances, 2018 In order to reduce dead zone of Closed Shell-Electrode Silicon Detector (CSESD), this paper introduces an optimal scheme of 3D shell electrode type detector– a novel type of Honeycomb Shell Electrode Detector– HSED (Chinese patent #zl 201710 676008.3 ...
Ya Zhang +4 more
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A Simulation Study of Single Event Burnout (SEB) in a High-Voltage Pin Diode [PDF]
فصلنامه علوم و فناوری فضاییExposure to ionizing radiation in space can potentially destroy electronic devices due to single-event effects (SEEs). Developing modern space technology requires high-voltage devices to supply the increased electric power demand.
Masume Soleimaninia
doaj +1 more source
A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
Micromachines, 2022 In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer ...
Xiaodong Zhang +4 more
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