Accelerating Flux Calculations Using Sparse Sampling
Micromachines, 2018 The ongoing miniaturization in electronics poses various challenges in the designing of modern devices and also in the development and optimization of the corresponding fabrication processes. Computer simulations offer a cost- and time-saving possibility
Lukas Gnam +4 more
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Simulation of silicon carbide JFET with the TCAD tool SILVACO [PDF]
, 2013 118 σ.Εθνικό Μετσόβιο Πολυτεχνείο--Μεταπτυχιακή Εργασία. Διεπιστημονικό-Διατμηματικό Πρόγραμμα Μεταπτυχιακών Σπουδών (Δ.Π.Μ.Σ.) “Μικροσυστήματα και Νανοδιατάξεις”Σε αυτήν την διπλωματική εργασία εξετάζεται η προσομοίωση με TCAD, η βασική λειτουργία του ...
Stefanakis, Dionysios Z. +1 more
core +1 more source
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
core +1 more source
GaN-Based GAA Vertical CMOS Inverter
IEEE Journal of the Electron Devices Society, 2022 In this work, we simulate the static and dynamic characteristics of gallium nitride (GaN)-based gate-all-around (GAA) vertical nanowire complementary metal–oxide–semiconductor (CMOS) inverter. Based on the 3-D simulator of Silvaco-TCAD, the
Xinke Liu +7 more
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Improved Perovskite Solar Cell Performance Using Semitransparent CNT Layer [PDF]
Journal of Optoelectronical Nanostructures, 2023 In this paper, the effect of using semi-transparent Carbonnanotube layer (CNT) on the efficiency of perovskitesolar cell (PSC) is investigated. One of the mostimportant process in PCS is charge collecting. In thisregard, Carbon nanotubes have the ability
Mansureh Roohollahi +2 more
doaj +1 more source
Ternary logic decoder using independently controlled double-gate Si-NW MOSFETs
Scientific Reports, 2021 A ternary logic decoder (TLD) is demonstrated with independently controlled double-gate (ICDG) silicon-nanowire (Si-NW) MOSFETs to confirm a feasibility of mixed radix system (MRS). The TLD is essential component for realization of the MRS.
Seong-Joo Han +8 more
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Determination of the Sensitive Volume and Critical Charge for Induction of SEU in Nanometer SRAMs [PDF]
فصلنامه علوم و فناوری فضایی, 2023 In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two important quantities in Single Event Upset (SEU) calculations have been determined. SEU is the most common event in space investigations.
Gholamreza Raisali +2 more
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Optimization of 3D shell electrode detectors—A type of honeycomb shell electrode detector
AIP Advances, 2018 In order to reduce dead zone of Closed Shell-Electrode Silicon Detector (CSESD), this paper introduces an optimal scheme of 3D shell electrode type detector– a novel type of Honeycomb Shell Electrode Detector– HSED (Chinese patent #zl 201710 676008.3 ...
Ya Zhang +4 more
doaj +1 more source
A Simulation Study of Single Event Burnout (SEB) in a High-Voltage Pin Diode [PDF]
فصلنامه علوم و فناوری فضاییExposure to ionizing radiation in space can potentially destroy electronic devices due to single-event effects (SEEs). Developing modern space technology requires high-voltage devices to supply the increased electric power demand.
Masume Soleimaninia
doaj +1 more source
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
Micromachines, 2023 In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software.
Hanghang Lv +11 more
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