GaN-Based GAA Vertical CMOS Inverter
IEEE Journal of the Electron Devices Society, 2022 In this work, we simulate the static and dynamic characteristics of gallium nitride (GaN)-based gate-all-around (GAA) vertical nanowire complementary metal–oxide–semiconductor (CMOS) inverter. Based on the 3-D simulator of Silvaco-TCAD, the
Xinke Liu +7 more
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Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades [PDF]
, 2012 The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature
Bagolini, A. +9 more
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C3TM: CEI CCD charge transfer model for radiation damage analysis and testing [PDF]
, 2018 Radiation induced defects in the silicon lattice of Charge Couple Devices (CCDs) are able to trap electrons during read out and thus create a smearing effect that is detrimental to the scientific data.
Burgon, Ross +4 more
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Determination of the Sensitive Volume and Critical Charge for Induction of SEU in Nanometer SRAMs [PDF]
فصلنامه علوم و فناوری فضایی, 2023 In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two important quantities in Single Event Upset (SEU) calculations have been determined. SEU is the most common event in space investigations.
Gholamreza Raisali +2 more
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Optimization of 3D shell electrode detectors—A type of honeycomb shell electrode detector
AIP Advances, 2018 In order to reduce dead zone of Closed Shell-Electrode Silicon Detector (CSESD), this paper introduces an optimal scheme of 3D shell electrode type detector– a novel type of Honeycomb Shell Electrode Detector– HSED (Chinese patent #zl 201710 676008.3 ...
Ya Zhang +4 more
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Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
Micromachines, 2023 In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software.
Hanghang Lv +11 more
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A Simulation Study of Single Event Burnout (SEB) in a High-Voltage Pin Diode [PDF]
فصلنامه علوم و فناوری فضاییExposure to ionizing radiation in space can potentially destroy electronic devices due to single-event effects (SEEs). Developing modern space technology requires high-voltage devices to supply the increased electric power demand.
Masume Soleimaninia
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TCAD device modelling and simulation of wide bandgap power semiconductors [PDF]
, 2018 Technology computer-aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However, most TCAD tools were originally developed for silicon and their performance and accuracy for wide bandgap ...
Antoniou, Marina +3 more
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SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
Вестник Северо-Кавказского федерального университета, 2022 The program Silvaco TCAD simulated electrical parameters of solar cells based on AlxGa1-xAs - InxGa1-xAs - GaAs under AM 1.5 for different values of x.
Oleg V. Devitsky, Igor A. Sysoev
doaj
Design and Simulation of SWIR nBn-InGaAs Photodetector with AlGaAs Barrier [PDF]
EPJ Web of ConferencesThe article discusses the simulation of an nBn-InGaAs photodetector using Silvaco TCAD at 300 K, focusing on optimizing the barrier performance and reducing the valence band offset.
Tok Çağrı +5 more
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