Results 21 to 30 of about 10,669 (173)
SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
Вестник Северо-Кавказского федерального университета, 2022 The program Silvaco TCAD simulated electrical parameters of solar cells based on AlxGa1-xAs - InxGa1-xAs - GaAs under AM 1.5 for different values of x.
Oleg V. Devitsky, Igor A. Sysoev
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Design and Simulation of SWIR nBn-InGaAs Photodetector with AlGaAs Barrier [PDF]
EPJ Web of ConferencesThe article discusses the simulation of an nBn-InGaAs photodetector using Silvaco TCAD at 300 K, focusing on optimizing the barrier performance and reducing the valence band offset.
Tok Çağrı +5 more
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Advanced TCAD modeling of HfO$_2$-based ReRAM: voupling redox reactions and thermal effects
, 2023 International audienceThis paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the essential redox reactions ...
Blaise, Philippe +5 more
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Silvaco TCAD Implementation of GaAs/GaSb Quantum Dot Solar Cell
, 2023 In this work a GaAs/GaSb-based p-i-n quantum dot solar cell (QDSC) has been implemented in Silvaco TACD environment. The addition of GaSb Quantum dots (QD) in the GaAs intrinsic layer extends the absorption capability, for which photons with higher ...
S.M. Shafkat Nawaz +2 more
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Etude et simulation d’un transistor VDMOS avec TCAD SILVACO [PDF]
, 2014 51 f. : ill. ; 30 cm. (+ CD-Rom)L’électronique de puissance constitue de différentes axes de recherche qui nous a permet de les appliqué dans plusieurs système et différentes domaines.
Houari Ridha
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Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes
Micromachines, 2022 We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction.
Yi Fang, Ling Chen, Yuqi Liu, Hong Wang
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Simulation of silicon carbide JFET with the TCAD tool SILVACO
, 2013 118 σ.Εθνικό Μετσόβιο Πολυτεχνείο--Μεταπτυχιακή Εργασία. Διεπιστημονικό-Διατμηματικό Πρόγραμμα Μεταπτυχιακών Σπουδών (Δ.Π.Μ.Σ.) “Μικροσυστήματα και Νανοδιατάξεις”Σε αυτήν την διπλωματική εργασία εξετάζεται η προσομοίωση με TCAD, η βασική λειτουργία του ...
Stefanakis, Dionysios Z. +1 more
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Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer
Results in Physics, 2021 A comprehensive study on an E-mode AlGaN/GaN MIS-HEMT with triple barrier layer is conducted by Silvaco TCAD software. The effect of geometric parameters of gate dielectric layer, including the length of both sides and the recessed depth, on the device ...
Fan Xia +7 more
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Modeling and Design of Graphene GaAs Junction Solar Cell
Advances in Condensed Matter Physics, 2015 Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work ...
Yawei Kuang +6 more
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Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation [PDF]
Журнал нано- та електронної фізики, 2014 Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration.
A.B. Gnilenko, S.V. Plaksin
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